Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70875
標題: Nonlinear dependence between the surface reflectance and the duty-cycle of semiconductor nanorod array
作者: Pai, Y.H.
Lin, Y.C.
Tsai, J.L.
Lin, G.R.
關鍵字: colloidal lithography;fabrication;nanostructures;deposition;gratings
Project: Optics Express
期刊/報告no:: Optics Express, Volume 19, Issue 3, Page(s) 1680-1690.
摘要: 
The nonlinear dependence between the duty-cycle of semiconductor nanorod array and its surface reflectance minimization is demonstrated. The duty-cycle control on thin-SiO(2) covered Si nanorod array is performed by O(2-) plasma pre-etching the self-assembled polystyrene nanosphere array mask with area density of 4 x 10(8) rod/cm(-2). The 120-nm high SiO(2) covered Si nanorod array is obtained after subsequent CF(4)/O(2) plasma etching for 160 sec. This results in a tunable nanorod diameter from 445 to 285 nm after etching from 30 to 80 sec, corresponding to a varying nanorod duty-cycle from 89% to 57%. The TM-mode reflection analysis shows a diminishing Brewster angle shifted from 71 degrees to 54 degrees with increasing nanorod duty-cycle from 57% to 89% at 532 nm. The greatly reduced small-angle reflectance reveals a nonlinear trend with enlarging duty-cycle, leading to a minimum surface reflectance at nanorod duty-cycle of 85%. Both the simulation and experiment indicate that such a surface reflectance minimum is even lower than that of a uniformly SiO(2) covered Si substrate on account of its periodical nanorod array architecture with tuned duty-cycle. (C) 2011 Optical Society of America
URI: http://hdl.handle.net/11455/70875
ISSN: 1094-4087
DOI: 10.1364/oe.19.001680
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