Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70959
標題: Electron-phonon coupling in nanodevices
作者: Kral, K.
Lin, C.Y.
關鍵字: Quantum dot;Nanotransistor;Electron-phonon interaction;Upconversion;quantum dots;nanostructures;relaxation
Project: Physica E-Low-Dimensional Systems & Nanostructures
期刊/報告no:: Physica E-Low-Dimensional Systems & Nanostructures, Volume 42, Issue 3, Page(s) 618-621.
摘要: 
We study theoretically the manifestation of the nonadiabaticity of the electron-longitudinal optical (LO)-phonon small open system of a quantum dot. This nonadiabaticity has an influence on the current-voltage characteristics of the nanotransistor. The nanotransistor is represented by a semiconductor quantum dot with the attached source and the drain electrodes, together with a gate. Under a certain asymmetry of the contacts the electron-optical phonon interaction, causing the electronic states occupation upconversion, is shown to lead to a creation of a spontaneous voltage between the source and drain or, alternatively, to a spontaneous current in case when the source and the drain are shunted. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/70959
ISSN: 1386-9477
DOI: 10.1016/j.physe.2009.06.059
Appears in Collections:期刊論文

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