Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70976
標題: Interband optical transitions in GaP nanowires encapsulated in GaN nanotubes
作者: Lee, M.W.
Hsueh, H.C.
Lin, H.M.
Chen, C.C.
關鍵字: gallium nitride nanowires;quantum wells;excitons
Project: Physical Review B
期刊/報告no:: Physical Review B, Volume 67, Issue 16.
摘要: 
This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0-4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.
URI: http://hdl.handle.net/11455/70976
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.67.161309
Appears in Collections:期刊論文

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