Magnetic-field-induced insulator quantum Hall conductor-insulator transitions in doped GaAs/AlxGa1-xAs quantum wells

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70977

標題:	Magnetic-field-induced insulator quantum Hall conductor-insulator transitions in doped GaAs/AlxGa1-xAs quantum wells
作者:	Lee, C.H. Chang, Y.H. Suen, Y.W. Lin, H.H.
關鍵字:	non-metallic conduction;2 dimensions;low-temperatures;diffusion;layers
Project:	Physical Review B
期刊/報告no：:	Physical Review B, Volume 56, Issue 23, Page(s) 15238-15241.
摘要:	We present magnetotransport measurements on GaAs/AlxGa1-xAs multiple quantum wells doped with impurities at the centers of GaAs layers. Magnetic-field-induced insulator-quantum Hall conductor-insulator transitions with a well defined scaling behavior were observed. The critical exponents as well as the resistivities at the two critical magnetic fields are close to each ether. Their values are, however, different from the values obtained from similar studies performed on modulation-doped GaAs/AlxGa1-xAs heterostructures.
URI:	http://hdl.handle.net/11455/70977
ISSN:	1098-0121
DOI:	10.1103/PhysRevB.56.15238
Appears in Collections:	期刊論文

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