Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70977
DC FieldValueLanguage
dc.contributor.authorLee, C.H.en_US
dc.contributor.authorChang, Y.H.en_US
dc.contributor.authorSuen, Y.W.en_US
dc.contributor.authorLin, H.H.en_US
dc.date1997zh_TW
dc.date.accessioned2014-06-11T06:00:40Z-
dc.date.available2014-06-11T06:00:40Z-
dc.identifier.issn1098-0121zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/70977-
dc.description.abstractWe present magnetotransport measurements on GaAs/AlxGa1-xAs multiple quantum wells doped with impurities at the centers of GaAs layers. Magnetic-field-induced insulator-quantum Hall conductor-insulator transitions with a well defined scaling behavior were observed. The critical exponents as well as the resistivities at the two critical magnetic fields are close to each ether. Their values are, however, different from the values obtained from similar studies performed on modulation-doped GaAs/AlxGa1-xAs heterostructures.en_US
dc.language.isoen_USzh_TW
dc.relationPhysical Review Ben_US
dc.relation.ispartofseriesPhysical Review B, Volume 56, Issue 23, Page(s) 15238-15241.en_US
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.56.15238en_US
dc.subjectnon-metallic conductionen_US
dc.subject2 dimensionsen_US
dc.subjectlow-temperaturesen_US
dc.subjectdiffusionen_US
dc.subjectlayersen_US
dc.titleMagnetic-field-induced insulator quantum Hall conductor-insulator transitions in doped GaAs/AlxGa1-xAs quantum wellsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1103/PhysRevB.56.15238zh_TW
item.grantfulltextnone-
item.openairetypeJournal Article-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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