Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70980
標題: Structural, electronic, and energetic properties of SiC 111 /ZrB(2) 0001 heterojunctions: A first-principles density functional theory study
作者: Liu, P.L.
Chizmeshya, A.V.G.
Kouvetakis, J.
關鍵字: wave basis-set;epitaxial-growth;ultrasoft pseudopotentials;sic-polytypes;surface;semiconductors;localization;si(111);films;model
Project: Physical Review B
期刊/報告no:: Physical Review B, Volume 77, Issue 3.
摘要: 
First-principles density functional theory was used to determine the structural properties and thermodynamic stability of strained heterojunctions between cubic SiC and hexagonal ZrB(2) films grown on Si(100) platforms. The SiC films were generated experimentally via single source depositions of the SiH(3)C C - SiH(3) compound on ZrB(2)/Si(100) hybrid substrates. In this study, a fixed stoichiometry (Si(6)C(6)Zr(6)B(12)) supercell was used to calculate the equilibrium atomic and electronic structure of six plausible bonding arrangements at the SiC/ZrB(2) interface, involving tetrahedrally coordinated C or Si centers bonded with either Zr or B atoms. The relative stability of the resultant structures is examined as a function of the Si and Zr chemical potentials. We find that the lowest energy configuration comprises of Si centers bonded to one C and three Zr atoms and exhibits the smallest bond strains with "bulklike" interatomic distances. This lowest energy structure is also consistent with cross-section transmission electron microscopy measurements of the near-interface region of SiC(111) films grown on ZrB(2)(0001) buffered Si(111). A detailed analysis of the electronic structure indicates that delocalized "sheetlike" metallic bonding stabilizes this structure between covalent SiC and semimetallic ZrB(2). Assuming no intermixing at the interface, this lowest energy model suggests that the SiC overlayers grown on ZrB(2) are C terminated. However, calculations on isolated SiC slabs predict that Si termination is preferred, in accord with experimental observations for SiC grown on various substrates.
URI: http://hdl.handle.net/11455/70980
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.77.035326
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