Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/70980
DC FieldValueLanguage
dc.contributor.authorLiu, P.L.en_US
dc.contributor.authorChizmeshya, A.V.G.en_US
dc.contributor.authorKouvetakis, J.en_US
dc.date2008zh_TW
dc.date.accessioned2014-06-11T06:00:40Z-
dc.date.available2014-06-11T06:00:40Z-
dc.identifier.issn1098-0121zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/70980-
dc.description.abstractFirst-principles density functional theory was used to determine the structural properties and thermodynamic stability of strained heterojunctions between cubic SiC and hexagonal ZrB(2) films grown on Si(100) platforms. The SiC films were generated experimentally via single source depositions of the SiH(3)C C - SiH(3) compound on ZrB(2)/Si(100) hybrid substrates. In this study, a fixed stoichiometry (Si(6)C(6)Zr(6)B(12)) supercell was used to calculate the equilibrium atomic and electronic structure of six plausible bonding arrangements at the SiC/ZrB(2) interface, involving tetrahedrally coordinated C or Si centers bonded with either Zr or B atoms. The relative stability of the resultant structures is examined as a function of the Si and Zr chemical potentials. We find that the lowest energy configuration comprises of Si centers bonded to one C and three Zr atoms and exhibits the smallest bond strains with "bulklike" interatomic distances. This lowest energy structure is also consistent with cross-section transmission electron microscopy measurements of the near-interface region of SiC(111) films grown on ZrB(2)(0001) buffered Si(111). A detailed analysis of the electronic structure indicates that delocalized "sheetlike" metallic bonding stabilizes this structure between covalent SiC and semimetallic ZrB(2). Assuming no intermixing at the interface, this lowest energy model suggests that the SiC overlayers grown on ZrB(2) are C terminated. However, calculations on isolated SiC slabs predict that Si termination is preferred, in accord with experimental observations for SiC grown on various substrates.en_US
dc.language.isoen_USzh_TW
dc.relationPhysical Review Ben_US
dc.relation.ispartofseriesPhysical Review B, Volume 77, Issue 3.en_US
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.77.035326en_US
dc.subjectwave basis-seten_US
dc.subjectepitaxial-growthen_US
dc.subjectultrasoft pseudopotentialsen_US
dc.subjectsic-polytypesen_US
dc.subjectsurfaceen_US
dc.subjectsemiconductorsen_US
dc.subjectlocalizationen_US
dc.subjectsi(111)en_US
dc.subjectfilmsen_US
dc.subjectmodelen_US
dc.titleStructural, electronic, and energetic properties of SiC 111 /ZrB(2) 0001 heterojunctions: A first-principles density functional theory studyen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1103/PhysRevB.77.035326zh_TW
item.grantfulltextnone-
item.openairetypeJournal Article-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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