Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71320
標題: Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
作者: Fu, Y.K.
Lu, Y.H.
Jiang, R.H.
Chen, B.C.
Fang, Y.H.
Xuan, R.
Su, Y.K.
Lin, C.F.
Chen, J.F.
關鍵字: Quaternary;AlInGaN;Light-emitting diodes;Polarization;Metalorganic;vapor phase epitaxy;near-ultraviolet;inxalyga1-x-yn
Project: Solid-State Electronics
期刊/報告no:: Solid-State Electronics, Volume 62, Issue 1, Page(s) 142-145.
摘要: 
Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al(0.089)In(0.035)Ga(0.876)N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer. Crown Copyright (C) 2011 Published by Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/71320
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.04.018
Appears in Collections:期刊論文

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