Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71321
標題: Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO2 tunnel layer
作者: Kang, T.K.
Liu, H.W.
Wang, F.H.
Lin, C.L.
Liao, T.C.
Wu, W.F.
Project: Solid-State Electronics
期刊/報告no:: Solid-State Electronics, Volume 61, Issue 1, Page(s) 100-105.
摘要: 
Stacked HfAlO-SiO2 tunnel layers are designed for Pd nanocrystal nonvolatile memories. For the sample with 1.5 nm-HfAlO/3.5 nm-SiO2 tunnel layer, a smaller initial memory window is obtained compared to the sample with 3.5 nm-HfAlO/1.5 nm-SiO2 tunnel layer. Owing to the thermally induced traps in HfAlO-SiO2 films are located at a farther distance from the Si substrate and more effective blocking of charge leakage by asymmetric tunnel barrier, a larger final memory window and better retention characteristic can be obtained for Al/blocking oxide SiO2/Pd NC5/1.5 nm-HfAlO/3.5 nm-SiO2/Si structure. A N-2 plasma treatment can further improve the memory characteristics. Better memory characteristics can be obtained for Pd-nanocrystal-based nonvolatile memory with an adequate thickness ratio of HfAlO to SiO2. (C) 2011 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/71321
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.02.003
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