Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71325
標題: Qualitative analysis on gain compression in power MOS transistor
作者: Hsu, H.M.
關鍵字: gain compression;large-signal;power MOS transistor;qualitative;analysis;rf power;performance
Project: Solid-State Electronics
期刊/報告no:: Solid-State Electronics, Volume 51, Issue 6, Page(s) 920-924.
摘要: 
This study presents a qualitative analysis on gain compression phenomenon of integrated power MOS transistor. In the large-signal operation of power device, the gain compression plays an essential role for characterizing non-linear behavior. The proposed approach combines both the RF waveform and load line characteristics in different quiescent points. Experimental results demonstrate the approach is feasible. The analysis of gain compression corresponds to different quiescent biases is useful during the implementation of power device for RFIC application. (c) 2007 Elsevier, Ltd. All rights reserved.
URI: http://hdl.handle.net/11455/71325
ISSN: 0038-1101
DOI: 10.1016/j.sse.2007.04.009
Appears in Collections:期刊論文

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