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標題: 以脈衝式熱回火技術改善非晶矽的太陽能電池光照衰退效應之研究
Improve the photodegradation effect of a-Si:H solar cells by pulsed rapid thermal annealing
作者: 郭秉宗
Kuo, Peng-Tzong
關鍵字: hydrogenated amorphous silicon films;脈波調變電漿;pulse-wave modulation RF power;rapid energy transfer annealing;快速能量傳輸回火;脈衝快速熱回火;氫化非晶矽薄膜
出版社: 電機工程學系所
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本論文在100℃低溫條件下以脈波調變電漿製作多矽氫鍵結之氫化非晶矽薄膜,並以快速能量傳輸回火技術對薄膜進行數次脈衝快速熱回火以研究薄膜在短暫受熱後矽氫鍵結結構及氫含量變化,並以光照測量其對光暗電導及光照衰退穩定性之影響。量測結果顯示以脈波調變射頻電漿的不同開啟及關閉時間,可以製作出含有不同矽氫鍵結結構的a-Si:H 薄膜,隋著電將開啟時間的增加,薄膜的鍵結主成分由結構致密的SiH轉變為結構鬆散的SiH2,再經由快速能量傳輸回火技術可以有效漸進地改變矽氫鍵結結構,並將不穩定的矽氫鍵結及過多的氫原子移除,其中以1950 cm-1、2020 cm-1及2100 cm-1的紅外吸收光譜訊號明顯地容易受加熱而降低。光電特性分析方面,在三次及五次回火溫度425℃~575℃短暫熱回火條件下,試片的光暗電導比皆可獲得明顯的改善,此結果指出薄膜內之缺陷密度因矽氫鍵結重組而降低。

In this work, hydrogenated amorphous silicon films exhibiting high concentration of polyhydride bonds were fabricated by pulse-wave modulated RF plasma at 100OC substrate temperature, and then these films were rapidly annealed with several heating pulses by rapid energy transfer annealing technique. Changing of silicon-to-hydrogen bonding configurations and hydrogen content due to this short heat treatment were investigated. Light illumination photoconduction measurement was used to explore the influence of the rearrangement of the structure of the film on the photo and dark conductivity and the photodegradation properties.
Releasing of hydrogen atoms and modifying the Si-H bonds could be gradually altered by adding the number of heating pulse. The intensities of IR absorption peaks at 1950 cm-1, 2020 cm-1, and 2100 cm-1 are easily reduced after annealing. For three- and five- 425 OC ~ 575 OC pulses annealing, the photo-to-dark current ratio of the film is increased. The results indicate that reconstruction of Si-H bonding configurations reduces the trap densities in the films.
其他識別: U0005-2908200615140400
Appears in Collections:電機工程學系所

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