Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/7136
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dc.contributor.advisor許恒銘zh_TW
dc.contributor.advisorHeng-Ming Hsuen_US
dc.contributor.author廖顯峰zh_TW
dc.contributor.authorLiao, Hsien-Fengen_US
dc.date2005zh_TW
dc.date.accessioned2014-06-06T06:39:36Z-
dc.date.available2014-06-06T06:39:36Z-
dc.identifier.urihttp://hdl.handle.net/11455/7136-
dc.description.abstract在本篇論文中,提出一個變壓器新的模型並解析1:1 同方向、1:1反方向和1:n變壓器之公式。此研究中包含了變壓器的高頻與低頻特性。提出解析計算變壓器一次側與二次測的自感值與互感值之公式且程式化。在低頻下,利用幾何平均距離來解析預測自感與互感。所有的變壓器都是使用TSMC 0.18 m RFCMOS 的製程。這是指出我們提出的模型可以描述變壓器的所有特性。這些模型模擬的結果參數可以符合量測結果到頻率20GHz之趨勢。此外,我們提出之等效電路可以描述其高頻特性。最後,對模擬結果做分析與討論。zh_TW
dc.description.abstractIn this thesis, a new model and an analytical formula for on-chip 1:1 non-inverting, 1:1 inverting and 1:n transformers are proposed. The analysis includes the low and high frequency performances. The analytical formula and programming by Matlab for self and mutual inductance of the primary and secondary windings in the transformer are developed. At low frequency, the analytical formula is developed to predict the self and mutual inductance based on GMD (geometry mean distance) approach. All of on-chip transformers are fabricated using the TSMC 0.18m RFCMOS process. It means the model can be described the characterization of transformers. The simulation results show the trend of these three parameters is coincident with the measurement ones for the frequency up to the value of 20 GHz. Moreover, the corresponding equivalent circuit is proposed to describe the high frequency characteristic. Finally, simulated results of three transformers are analyzed and discussed.en_US
dc.description.tableofcontentsChinese Abstract …………………………………………………………………… i English Abstract …………………………………………………………………… ii Acknowledgements ……………………………………………………………….. iv Contents ……………………………………………………………........................ v List of Tables ………………………………………………………....................... viii List of Figure ………………………………………………………........................ ix Chapter 1 Introduction ……………………………………………………………. 1 1.1 Motivation…………………………………………………………. 1 1.2 Reported literature ………………………………………………… 2 1.3 Organization ………………………………………………………. 3 Chapter 2 Basic Concepts of Transformer ………………………...……………… 4 2.1 Basic Principle of Transformer …………………….……………... 4 2.2 Basic Principle of Monolithic Transformer ……………………….. 7 2.2.1 Basic Electrical Characteristics ……………………………. 7 2.2.2 Frlan-style (Interwound) Transformer ………....................... 7 2.3 Loss and Coupling of Monolithic Transformer …………………… 8 2.3.1 Metal Loss ………………………………………………… 8 2.3.2 Substrate Loss ……………………………………………... 9 2.3.3 Coupled Capacitance ………………………....................... 10 2.4 Measurement and Simulation Methods ………………………….. 11 2.6 Measurement Definitions …………………………....................... 12 Chapter 3 Analytical formula of self and mutual inductance in transformer …… 14 3.1 Inductance calculation …………………………………………… 14 3.1.1 GMD (Geometric Mean Distance) formula ……………… 14 3.1.2 Calculation of Inductance for Spiral Inductor ……………. 15 3.2 Calculation of 1:1 transformer …………………………………... 17 3.2.1 Self-inductance of 1:1 transformer ………………………. 17 3.3.2 Mutual-inductance of 1:1 transformer …………………… 17 3.3 Calculation of 1:n transformer …………………………………... 18 3.3.1 Self-inductance of 1:n transformer ………………………. 18 3.3.2 Mutual-inductance of 1:n transformer …………………… 19 3.4 Compare measurement and programming results ………………. 20 Chapter 4 High frequency of on-chip transformer ……………………………… 22 4.1 Basic Concepts of Inductor Models ……………………………... 22 4.2 Basic Concepts of Transformer Models …………………………. 22 4.2.1 Multi-section Lumped-Element Models …………………. 23 4.2.2 Compact Models …………………………………………. 24 4.3 Proposed Transformer Model ……………………………………. 24 4.4 Coupling capacitance between the primary and secondary windings ……………………………………………………….. 24 4.5 Results and Discussion ……………………………....................... 25 4.5.1 Results of the 1:1 Monolithic Transformer ………………. 25 4.5.2 Results of the 1:n Monolithic Transformer ………………. 29 Chapter 5 Conclusions ……………………………………………....................... 31 References …………………………………………………………………………. 33zh_TW
dc.language.isoen_USzh_TW
dc.publisher電機工程學系zh_TW
dc.subjectrficen_US
dc.subject射頻積體電路zh_TW
dc.subjecttransformeren_US
dc.subjectmodelen_US
dc.subject變壓器zh_TW
dc.subject積體電路zh_TW
dc.subject反方向zh_TW
dc.subject變壓器zh_TW
dc.subject製程zh_TW
dc.subject趨勢zh_TW
dc.subject模型zh_TW
dc.titleCMOS射頻積體電路變壓器之研究zh_TW
dc.titleStudy on Monolithic Transformer for CMOS RFIC Applicationen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
Appears in Collections:電機工程學系所
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