Please use this identifier to cite or link to this item:
標題: Effect of repetition nanoindentation of GaN epilayers on a-axis sapphire substrates
作者: Lin, M.H.
Wen, H.C.
Chang, Z.C.
Wu, S.C.
Wu, W.F.
Chou, C.P.
Project: Surface and Interface Analysis
期刊/報告no:: Surface and Interface Analysis, Volume 43, Issue 5, Page(s) 918-922.
In this work, gallium nitride (GaN) epilayers were deposited on a-axis sapphire substrate by means of metal organic chemical vapor deposition (MOCVD). Berkovich nanoindentation was used to explore the repetition pressure-induced impairment of the GaN film. The observation of load-displacement vs stress-strain curves concludes that basal slip is implicated in the deformation on the A plane GaN. The increase in the hardness (H) and elasticmodulus (E) was determined from cyclic nanoindentation, and resulted in a crack due to the formation of incipient slip bands and/or the to-and-fro motion of mobile dislocation. It is indicated that the generation of individual dislocation and residual deformation of the GaN films are showed by CL mapping analysis. From the morphological studies, it is revealed that the crack was found by means of atomic force microscope (AFM) technique at nine loading/reloading cycles even after the indentation beyond the critical depth on the residual indentation impression. Copyright (C) 2010 John Wiley & Sons, Ltd.
ISSN: 0142-2421
DOI: 10.1002/sia.3658
Appears in Collections:期刊論文

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.