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|標題:||Dynamics of copper atoms on Si(111)-7 x 7 surfaces||作者:||Ho, M.S.
|關鍵字:||scanning tunneling microscope (STM);dynamics;copper;silicon;cu/si(111) quasi-5x5 overlayer;magic clusters;initial-stages;cu;nanostructures;au/si(111);growth;phase;au;ag||Project:||Surface Science||期刊/報告no：:||Surface Science, Volume 601, Issue 18, Page(s) 3974-3978.||摘要:||
This study investigated the dynamics of copper atoms adsorbed on Si(111)-7 x 7 surfaces between 300 K and 623 K using a variable-temperature scanning tunneling microscope (STM). The diffusion behavior of copper clusters containing up to similar to 6 atoms into a particular half unit cell of the 7 x 7 reconstructed Si(111) surface was considered. The movements and the formation of copper clusters were tracked in detail. The activation energies and pre-exponential factors for various diffusion paths were estimated. Finally, the Cu-etching-Si process and the quasi-5 x 5 incommensurated phase of Cu/Si islands were discussed. (C) 2007 Elsevier B.V. All rights reserved.
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