Please use this identifier to cite or link to this item:
|標題:||Formation of Si clusters and their role in homoepitaxial growth on Si(111)-7 x 7 surfaces||作者:||Ho, M.S.
|關鍵字:||scanning tunneling microscopy;silicon;clusters;nucleation;epitaxy;growth;scanning-tunneling-microscopy;transmission electron-diffraction;silicon clusters;epitaxial-growth;diffusion;nucleation||Project:||Surface Science||期刊/報告no：:||Surface Science, Volume 564, Issue 1-3, Page(s) 93-107.||摘要:||
With scanning tunneling microscopy (STM), we observe the dynamic behavior of Si atoms on Si(111)-7 x 7 surfaces. At temperatures below similar to200 degreesC, Si atoms are found to aggregate into small clusters that show interesting structures on surfaces. When the substrate temperature is raised above 200 degreesC, only a new type of Si magic clusters is discovered. These clusters dictate many dynamic phenomena on Si(111) surfaces, including mass transport, step fluctuations, epitaxial growth, and the decay of non-equilibrium structures. At temperatures above similar to400 degreesC, the magic clusters become mobile. Most of the clusters are confined within the half-cells, but some of them move out of the half-cells and re-appear at a distance of about a few hundred angstroms (Angstrom) away. Using Arrhenius analysis, the activation energies and pre-exponential factors for different moving pathways are derived. The jump-length distribution exhibits two maxima; one at the origin and another at similar to500 Angstrom away. The growth of islands can occur either at the step edges or by a concerted reaction at the terraces as the cluster density fluctuates to reach a threshold value. (C) 2004 Published by Elsevier B.V.
|Appears in Collections:||期刊論文|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.