Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71380
DC FieldValueLanguage
dc.contributor.authorHo, M.S.en_US
dc.contributor.authorHwang, I.S.en_US
dc.contributor.authorTsong, T.T.en_US
dc.date2004zh_TW
dc.date.accessioned2014-06-11T06:01:18Z-
dc.date.available2014-06-11T06:01:18Z-
dc.identifier.issn0039-6028zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/71380-
dc.description.abstractWith scanning tunneling microscopy (STM), we observe the dynamic behavior of Si atoms on Si(111)-7 x 7 surfaces. At temperatures below similar to200 degreesC, Si atoms are found to aggregate into small clusters that show interesting structures on surfaces. When the substrate temperature is raised above 200 degreesC, only a new type of Si magic clusters is discovered. These clusters dictate many dynamic phenomena on Si(111) surfaces, including mass transport, step fluctuations, epitaxial growth, and the decay of non-equilibrium structures. At temperatures above similar to400 degreesC, the magic clusters become mobile. Most of the clusters are confined within the half-cells, but some of them move out of the half-cells and re-appear at a distance of about a few hundred angstroms (Angstrom) away. Using Arrhenius analysis, the activation energies and pre-exponential factors for different moving pathways are derived. The jump-length distribution exhibits two maxima; one at the origin and another at similar to500 Angstrom away. The growth of islands can occur either at the step edges or by a concerted reaction at the terraces as the cluster density fluctuates to reach a threshold value. (C) 2004 Published by Elsevier B.V.en_US
dc.language.isoen_USzh_TW
dc.relationSurface Scienceen_US
dc.relation.ispartofseriesSurface Science, Volume 564, Issue 1-3, Page(s) 93-107.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.susc.2004.05.137en_US
dc.subjectscanning tunneling microscopyen_US
dc.subjectsiliconen_US
dc.subjectclustersen_US
dc.subjectnucleationen_US
dc.subjectepitaxyen_US
dc.subjectgrowthen_US
dc.subjectscanning-tunneling-microscopyen_US
dc.subjecttransmission electron-diffractionen_US
dc.subjectsilicon clustersen_US
dc.subjectepitaxial-growthen_US
dc.subjectdiffusionen_US
dc.subjectnucleationen_US
dc.titleFormation of Si clusters and their role in homoepitaxial growth on Si(111)-7 x 7 surfacesen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.susc.2004.05.137zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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