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|標題:||Crystalline quality and photovoltaic performance of InGaAs solar cells grown on GaAs substrate with large-misoriented angle||作者:||Tseng, M.C.
|關鍵字:||X-ray reciprocal space mapping;In0.16Ga0.84As solar cell;Misoriented;GaAs substrate;layers;diode||Project:||Vacuum||期刊/報告no：:||Vacuum, Volume 86, Issue 7, Page(s) 843-847.||摘要:||
This article reports the quality of InxGa1-xAs (0 < x < 0.2) layers grown on 15 degrees-off GaAs substrate by metalorganic chemical vapor deposition. The crystalline quality of the InxGa1-xAs epilayers is determined by x-ray reciprocal space mapping (RSM). From the RSM results, the crystalline quality of InxGa1-xAs epilayers grown with small indium composition (x < 0.11) is better than that of large indium composition (x > 0.11) due to the small strain relaxation. The crystalline quality of InxGa1-xAs epilayer, is found to strongly depend on indium content. The photovoltaic performance of p-n structure In0.16Ga0.84As solar cell shows the lower device performance, because the InxGa1-xAs films grown on 15 degrees-off GaAs substrate show a large strain relaxation in the active layer of solar cell. It results in dislocation defects created at the initial active layer/InxGa1-xAs graded layer interface. The performance of In0.16Ga0.84As solar cell with p-n structure can be significantly improved by the p-i-n structure. (C) 2011 Elsevier Ltd. All rights reserved.
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