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|標題:||Optimum growth of ZnSe film by molecular beam deposition||作者:||Huang, C.W.
|關鍵字:||ZnSe;MBD;Glass substrate;chemical-vapor-deposition;atomic layer epitaxy;thin-films;structural-characterization;electrical-properties;zinc selenide;laser-diodes;solar-cells;gaas;znse/gaas||Project:||Vacuum||期刊/報告no：:||Vacuum, Volume 83, Issue 2, Page(s) 313-318.||摘要:||
Zinc selenide (ZnSe) thin film has been grown originally on Coning 7059 glass substrate by molecular beam deposition (MBD). Optimum growth condition has been determined rapidly by comparing and analyzing the relative characteristics of X-ray diffraction spectrum. In this paper, films deposited at different substrate temperatures as a function of Zn/Se beam equivalent pressure (BEP) ratios are investigated. As-grown ZnSe films are polycrystalline and have a cubic (zinc-blende type) structure by the X-ray diffraction technique. The composition of ZnSe film was determined by Energy dispersive spectroscopic (EDS) analysis. Optical properties of ZnSe film were characterized by photoluminescence spectra. Structural parameters such as lattice constant, grain size, strain, dislocation density calculated are correlated with various growth conditions. The dependence of film properties on various substrate temperatures and Se/Zn BEP ratios has been discussed in detail. Finally, high quality of ZnSe film has been successfully obtained and ready for device application. (C) 2008 Elsevier Ltd. All rights reserved.
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