Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71431
DC FieldValueLanguage
dc.contributor.authorHuang, C.W.en_US
dc.contributor.authorWeng, H.M.en_US
dc.contributor.authorJiang, Y.L.en_US
dc.contributor.authorUeng, H.Y.en_US
dc.date2008zh_TW
dc.date.accessioned2014-06-11T06:01:26Z-
dc.date.available2014-06-11T06:01:26Z-
dc.identifier.issn0042-207Xzh_TW
dc.identifier.urihttp://hdl.handle.net/11455/71431-
dc.description.abstractZinc selenide (ZnSe) thin film has been grown originally on Coning 7059 glass substrate by molecular beam deposition (MBD). Optimum growth condition has been determined rapidly by comparing and analyzing the relative characteristics of X-ray diffraction spectrum. In this paper, films deposited at different substrate temperatures as a function of Zn/Se beam equivalent pressure (BEP) ratios are investigated. As-grown ZnSe films are polycrystalline and have a cubic (zinc-blende type) structure by the X-ray diffraction technique. The composition of ZnSe film was determined by Energy dispersive spectroscopic (EDS) analysis. Optical properties of ZnSe film were characterized by photoluminescence spectra. Structural parameters such as lattice constant, grain size, strain, dislocation density calculated are correlated with various growth conditions. The dependence of film properties on various substrate temperatures and Se/Zn BEP ratios has been discussed in detail. Finally, high quality of ZnSe film has been successfully obtained and ready for device application. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationVacuumen_US
dc.relation.ispartofseriesVacuum, Volume 83, Issue 2, Page(s) 313-318.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.vacuum.2008.06.004en_US
dc.subjectZnSeen_US
dc.subjectMBDen_US
dc.subjectGlass substrateen_US
dc.subjectchemical-vapor-depositionen_US
dc.subjectatomic layer epitaxyen_US
dc.subjectthin-filmsen_US
dc.subjectstructural-characterizationen_US
dc.subjectelectrical-propertiesen_US
dc.subjectzinc selenideen_US
dc.subjectlaser-diodesen_US
dc.subjectsolar-cellsen_US
dc.subjectgaasen_US
dc.subjectznse/gaasen_US
dc.titleOptimum growth of ZnSe film by molecular beam depositionen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.vacuum.2008.06.004zh_TW
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypeJournal Article-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
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