Please use this identifier to cite or link to this item:
標題: Characterization of MgxZn1 (-) O-x thin films grown on sapphire substrates by metalorganic chemical vapor deposition
作者: Wu, C.C.
Wuu, D.S.
Lin, P.R.
Chen, T.N.
Horng, R.H.
Ou, S.L.
Tu, Y.L.
Wei, C.C.
Feng, Z.C.
關鍵字: MgxZn(1-x)O;Metalorganic chemical vapor deposition;P-type;Photoluminescence;Raman scattering;zno;photoluminescence;temperature;layers
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 519, Issue 6, Page(s) 1966-1970.
Wurtzite-structure MgxZn1-xO materials with five different compositions of x from 0 to 0.14 were grown on sapphire substrates by metalorganic chemical vapor deposition. It was found that increasing Mg content in the MgxZn1-xO not only increased the band gap energy of the film but was also beneficial to the epitaxial growth of p-type MgxZn1-xO without using any doping sources. In addition, the combined ultraviolet photoluminescence (PL) and Raman scattering spectra were measured with PL-Raman signals obtained together, showing a blue-shift of PL band and variation of resonant Raman multi-order longitudinal optical phonon modes with an increase of Mg content. (C) 2010 Elsevier B.V. All rights reserved.
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.10.036
Appears in Collections:期刊論文

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.