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|標題:||Characterization of MgxZn1 (-) O-x thin films grown on sapphire substrates by metalorganic chemical vapor deposition||作者:||Wu, C.C.
|關鍵字:||MgxZn(1-x)O;Metalorganic chemical vapor deposition;P-type;Photoluminescence;Raman scattering;zno;photoluminescence;temperature;layers||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 519, Issue 6, Page(s) 1966-1970.||摘要:||
Wurtzite-structure MgxZn1-xO materials with five different compositions of x from 0 to 0.14 were grown on sapphire substrates by metalorganic chemical vapor deposition. It was found that increasing Mg content in the MgxZn1-xO not only increased the band gap energy of the film but was also beneficial to the epitaxial growth of p-type MgxZn1-xO without using any doping sources. In addition, the combined ultraviolet photoluminescence (PL) and Raman scattering spectra were measured with PL-Raman signals obtained together, showing a blue-shift of PL band and variation of resonant Raman multi-order longitudinal optical phonon modes with an increase of Mg content. (C) 2010 Elsevier B.V. All rights reserved.
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