Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71470
DC FieldValueLanguage
dc.contributor.authorChan, M.H.en_US
dc.contributor.authorLu, F.H.en_US
dc.date2009zh_TW
dc.date.accessioned2014-06-11T06:01:40Z-
dc.date.available2014-06-11T06:01:40Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/71470-
dc.description.abstractNitrogen-doped titanium dioxide (TiO2-xNx) thin films desirable for visible light photocatalysts; were prepared by reactive sputtering using air/Ar mixtures. Using air as the reactive gas allows the process to conduct at high base pressures (low vacuum), which reduces substantially the processing time. The obtained films transformed from mixed phases to anatase phase as the air/Ar flow ratio increased. Substitutional doping of nitrogen verified by X-ray photoelectron spectroscopy accounts for the red-shift of absorption edge in the absorption spectra. Anatase TiO2-xNx films could incorporate up to about 7.5 at.% substitutional nitrogen and a maximum of 23 at.% nitrogen was determined in the films with mixed phases. The optical band gaps of the TiO2-xNx films calculated from Tauc plots varied from 3.05 to 3.11 eV and those of the mixed phase ranged from 2.77 to 3.00 eV, which are all lower than that for pure anatase TiO2 and fall into the visible light regime. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 518, Issue 5, Page(s) 1369-1372.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2009.09.062en_US
dc.subjectTiO2-xNxen_US
dc.subjectReactive sputteringen_US
dc.subjectAiren_US
dc.subjectBand gapen_US
dc.subjectvisible-light photocatalysisen_US
dc.subjectthin-filmsen_US
dc.subjectelectronic-structureen_US
dc.subjectoptical-propertiesen_US
dc.subjecttitanium-dioxideen_US
dc.subjectnitrogenen_US
dc.subjectxpsen_US
dc.subjectirradiationen_US
dc.subjectsurfaceen_US
dc.subjectoxidesen_US
dc.titleCharacterization of N-doped TiO2 films prepared by reactive sputtering using air/Ar mixturesen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2009.09.062zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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