Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71471
DC FieldValueLanguage
dc.contributor.authorLiu, K.C.en_US
dc.contributor.authorTsai, J.R.en_US
dc.contributor.authorLin, W.K.en_US
dc.contributor.authorLi, C.S.en_US
dc.contributor.authorChen, J.N.en_US
dc.date2011zh_TW
dc.date.accessioned2014-06-11T06:01:40Z-
dc.date.available2014-06-11T06:01:40Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/71471-
dc.description.abstractOxygen plasma treatment process was used to passivate the non-stoichiometric HfO2 films deposited by magnetron sputtering. After optimal oxygen plasma treatment, the gate leakage of HfO2 films would be reduced and dielectric breakdown voltage would be improved to 30 percentage. XPS spectrum was used to analysis the non-stoichiometric HfO2 films after oxygen plasma treatment which demonstrate a higher concentration of incorporated oxygen atoms at the surface in comparison to the bulk HfO2. This simple method can maintain high-k dielectric deposition process at room temperature by sputtering. It would be useful for fabrication thin film transistor on polymer based substrate in the future. (C) 2011 Published by Elsevier B.V.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 519, Issue 15, Page(s) 5110-5113.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2011.01.154en_US
dc.titleDefect passivation by O-2 plasma treatment on high-k dielectric HfO2 films at room temperatureen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2011.01.154zh_TW
item.fulltextno fulltext-
item.grantfulltextnone-
item.openairetypeJournal Article-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
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