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|標題:||Effects of Ag contents and deposition temperatures on the electrical and optical behaviors of Ag-doped Cu2O thin films||作者:||Tseng, C.C.
|關鍵字:||Co-sputtering;Cu2O-Ag thin films;Opto-electronic properties;ito multilayers;silver;dependence;target||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 518, Issue 5, Page(s) 1407-1410.||摘要:||
Cu2O-Ag thin films were co-deposited by reactive sputtering on glass substrates. During deposition, Ag contents and deposited temperatures were varied. After deposition, a UV-VIS-NIR photometer and a Hall measurement system were used to characterize the optical and electrical properties of these films. The results showed that the Cu2O-Ag thin films had a decreased optical transmittance with the increase of Ag contents. The resistivity was also decreased, which is most likely due to the formation of Ag phase. Through the measurement of photo-induced conductivity, it was found that, when Ag concentration was at 4 at.%, the film had the highest increase in conductivity under light irradiation. This is due to the co-existence of Ag2O and Cu2O. However, when deposited at a temperature higher than room temperature, the photo-induced conductivity of this film became less obvious, apparently due to the dissociation of Ag2O. The results of Photoluminescence (PL) measurement confirmed that the Cu2O-Ag(4 at.%) sample might produce more electron-hole pairs than other samples, which caused the increase of conductivity. (C) 2009 Elsevier B.V. All rights reserved.
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