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|標題:||Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD||作者:||Lien, S.Y.
|關鍵字:||hot-wire chemical vapor deposition;microcrystalline silicon;heterojunction solar cell;chemical-vapor-deposition;crystalline silicon||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 516, Issue 5, Page(s) 747-750.||摘要:||
A double-side (bifacial) heterojunction (HJ) Si solar cell was fabricated using hot-wire chemical vapor deposition. The properties of n-type, intrinsic and p-type Si films were investigated. In these devices, the doped microcrystal line Si layers (n-type Si for emitter and p-type Si for back contact) are combined with and without a thin intrinsic amorphous Si buffer layer. The maximum temperature during the whole fabrication process was kept below 150 'C. The influence of hydrogen pre-treatment and n-Si emitter thickness on performance of solar cells have been studied. The best bifacial Si HJ solar cell (I cm 2 sample) with an intrinsic layer yielded an active area conversion efficiency of 16.4% with an open circuit voltage of 0.645 V, short circuit current of 34.8 mA/cm(2) and fill factor of 0.73. (c) 2007 Elsevier B.V. All rights reserved.
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