Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71477
標題: Fabrication and characteristics of n-Si/c-Si/p-Si heterojunction solar cells using hot-wire CVD
作者: Lien, S.Y.
Wu, B.R.
Liu, J.C.
Wu, D.S.
關鍵字: hot-wire chemical vapor deposition;microcrystalline silicon;heterojunction solar cell;chemical-vapor-deposition;crystalline silicon
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 516, Issue 5, Page(s) 747-750.
摘要: 
A double-side (bifacial) heterojunction (HJ) Si solar cell was fabricated using hot-wire chemical vapor deposition. The properties of n-type, intrinsic and p-type Si films were investigated. In these devices, the doped microcrystal line Si layers (n-type Si for emitter and p-type Si for back contact) are combined with and without a thin intrinsic amorphous Si buffer layer. The maximum temperature during the whole fabrication process was kept below 150 'C. The influence of hydrogen pre-treatment and n-Si emitter thickness on performance of solar cells have been studied. The best bifacial Si HJ solar cell (I cm 2 sample) with an intrinsic layer yielded an active area conversion efficiency of 16.4% with an open circuit voltage of 0.645 V, short circuit current of 34.8 mA/cm(2) and fill factor of 0.73. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71477
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2007.06.053
Appears in Collections:期刊論文

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