Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71478
標題: Formation and transformation of ZnTiO3 prepared by sputtering process
作者: Lee, Y.C.
Huang, Y.L.
Lee, W.H.
Shieu, F.S.
關鍵字: Zinc titanate;Thin film;Amorphous;Magnetron sputtering;Post-annealing;microwave dielectric-properties;system zno-tio2;zinc;ceramics;rutile
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 518, Issue 24, Page(s) 7366-7371.
摘要: 
Zinc titanate (ZnTiO3) films were prepared using RF magnetron sputtering at substrate temperatures ranging from 30 to 400 degrees C. Subsequent annealing of the as-deposited films was performed at temperatures ranging from 600 to 900 degrees C. It was found that all as-deposited films were amorphous, as confirmed by XRD. This was further confirmed by the onset of crystallization that took place at annealing temperatures 600 degrees C. The phase transformation for the as-deposited films and annealed films were investigated in this study. The results revealed that pure ZnTiO3 (hexagonal phase) can exist, and was obtained at temperatures between 700 and 800 degrees C. However, it was found that decomposition from hexagonal ZnTiO3 to cubic Zn2TiO4 and rutile TiO2 took place with a further increase in temperature to 900 degrees C. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71478
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.05.005
Appears in Collections:期刊論文

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