Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71484
標題: Investigation on the properties of molecular beam deposited ZnSe films
作者: Huang, C.W.
Weng, H.M.
Jiang, Y.L.
Ueng, H.Y.
關鍵字: ZnSe;MBD;Glass substrate;Growth rate;chemical bath deposition;atomic layer epitaxy;thin-films;electrical-properties;optical-properties;zinc selenide;laser-diodes;solar-cells;growth;gaas
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 517, Issue 13, Page(s) 3667-3671.
摘要: 
Molecular beam deposition was used to deposit high quality zinc selenide (ZnSe) thin film on glass substrate at various substrate temperatures and Se/Zn beam equivalent pressure ratios. The best growth condition was identified by analyzing characteristics such as the full width at half-maximum and peak intensity of the (111) preferred orientation in X-ray diffraction patterns. The dependence of lattice constant, growth rate, film composition and optical property on a variety of growth parameters was discussed in detail to identify how the quality of ZnSe film can be improved. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71484
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.01.085
Appears in Collections:期刊論文

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