Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71485
標題: Low-temperature hydrothermal-galvanic couple synthesis of BaTiO3 thin films on Ti-coated silicon substrates
作者: Chan, P.H.
Lu, F.H.
關鍵字: Hydrothermal-galvanic couple;Hydrothermal;Titanium films;Barium;titanate (BaTiO3);barium-titanate;phase-change;growth;kinetics;mechanism
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 517, Issue 17, Page(s) 4782-4785.
摘要: 
Crystalline BaTiO3 films were synthesized on Ti-coated silicon substrates at temperatures below 100 degrees C using a novel hydrothermal-galvanic couple method: Ti/Si was employed as the working electrode and platinum as the counter electrode without applying any external voltages or currents. Using this method, forming BaTiO3 is possible at temperatures as low as 50 degrees C over a period of 2 h, which is not possible with the conventional hydrothermal method. The growth rate of BaTiO3 is also much faster when prepared by such a novel method. The growth kinetics can be fitted rather well by a modified Johnson-Mehl-Avrami-Erofe'ev equation. The obtained activation energy for forming BaTiO3 on Ti/Si is 97 +/- 9 kJ mol(-1). (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71485
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.03.032
Appears in Collections:期刊論文

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