Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71490
標題: Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering
作者: Lee, M.H.
Hsieh, B.F.
Chang, S.T.
Lee, S.W.
關鍵字: SiGe;Schottky;Barrier;Interface;interface state density;p-channel;mosfets;gate;s/d
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 520, Issue 8, Page(s) 3379-3381.
摘要: 
In this study, the nano-scale epi-Ge/Si fabrication and the Schottky junction source/drain manufacture with Ni incorporation are demonstrated. The Ni Schottky junction formation by laser annealing (LA) and rapid thermal annealing, as well as the barrier height and interface characteristics, are discussed. Improvement in the density of interface trap (D-it) can be achieved by LA; this technology enhances the opportunity of high Ge concentration SiGe channel to play a part in the next-generation complementary metal-oxide- semiconductor applications. (c) 2011 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71490
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.10.083
Appears in Collections:期刊論文

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.