Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71496
標題: Rapid crystallization of a-Si : H films with various silicon-to-hydrogen bonding configurations using rapid energy transfer annealing
作者: Jiang, Y.L.
Chang, Y.C.
關鍵字: amorphous silicon;chemical vapor deposition;crystallization;annealing;chemical vapor-deposition;amorphous-silicon;grain-growth;temperature;recrystallization;transistors
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 500, Issue 1-2, Page(s) 316-321.
摘要: 
Hydrogenated amorphous silicon (a-Si:H) films were prepared by changing substrate temperature of plasma-enhanced chemical vapor deposition to induce different contents of monohydride and polyhydride bonds, which were then crystallized into polysilicon (poly-Si) films by rapid energy transfer annealing. Fourier transform infrared and transmission spectra show that the formation of numerous polyhydride bonds increases the hydrogen content and reduces the refractive index of a-Si:H films. The rise in the concentration of polyhydride bonds in as-deposited a-Si:H films can result in the increase of ultraviolet reflectance, small peak shift, and change in full width at half maximum of Raman scattering and X-ray diffraction peaks of the obtained poly-Si films after annealing. These results demonstrate that high-concentration polyhydride bonds can promote the rapid crystallization of a-Si:H and obtain high-crystallinity poly-Si films. Transmission electron microscopy identifies that the poly-Si films have the typical dendrite-like grain structure. (c) 2005 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71496
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2005.10.059
Appears in Collections:期刊論文

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