Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71498
DC FieldValueLanguage
dc.contributor.authorLin, W.K.en_US
dc.contributor.authorLiu, K.C.en_US
dc.contributor.authorChang, S.T.en_US
dc.contributor.authorLi, C.S.en_US
dc.date2012zh_TW
dc.date.accessioned2014-06-11T06:01:46Z-
dc.date.available2014-06-11T06:01:46Z-
dc.identifier.issn0040-6090zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/71498-
dc.description.abstractWe report here the performance of amorphous oxide transparent thin film transistors (TFTs) fabricated using DC magnetron sputter techniques at room temperature. Amorphous indium zinc oxide (a-IZO, In2O3:ZnO, 90:10 wt.%) and high dielectric constant hafnium oxide (HfO2) films were deposited for the semiconducting channel and gate insulator under a mixture of ambient argon and oxygen gas, respectively. The reported transparent TFT structure was a bottom-gate type, consisting of indium-tin-oxide and aluminium as gate electrode and source/drain electrodes, respectively. The optical transmittance of a-IZO films in the visible region was greater than 84%. The a-IZO TFTs showed that the field effect saturation mobility, I-on/I-off ratio, sub-threshold swing, and threshold voltage were extracted to give 13.09 cm(2)/V-s, 4 x 10(5), 0.42 V/decade, and 3.54 V. respectively. The reported a-IZO TFT with high dielectric constant HfO2 gate dielectric sputtered at room temperature presents high quality characteristics, which can be used as good candidate for the application of low-temperature fabricated optoelectronic devices on organic flexible substrates. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationThin Solid Filmsen_US
dc.relation.ispartofseriesThin Solid Films, Volume 520, Issue 7, Page(s) 3079-3083.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.tsf.2011.11.039en_US
dc.subjectIZOen_US
dc.subjectHfO2en_US
dc.subjectRoom temperatureen_US
dc.subjectHigh-kappaen_US
dc.subjectTFTen_US
dc.subjectOxide semiconductoren_US
dc.subjecthigh-mobilityen_US
dc.subjectsemiconductoren_US
dc.subjectsiliconen_US
dc.titleRoom temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-kappa HfO2 as gate insulatoren_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.tsf.2011.11.039zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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