Please use this identifier to cite or link to this item:
標題: Room temperature fabricated transparent amorphous indium zinc oxide based thin film transistor using high-kappa HfO2 as gate insulator
作者: Lin, W.K.
Liu, K.C.
Chang, S.T.
Li, C.S.
關鍵字: IZO;HfO2;Room temperature;High-kappa;TFT;Oxide semiconductor;high-mobility;semiconductor;silicon
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 520, Issue 7, Page(s) 3079-3083.
We report here the performance of amorphous oxide transparent thin film transistors (TFTs) fabricated using DC magnetron sputter techniques at room temperature. Amorphous indium zinc oxide (a-IZO, In2O3:ZnO, 90:10 wt.%) and high dielectric constant hafnium oxide (HfO2) films were deposited for the semiconducting channel and gate insulator under a mixture of ambient argon and oxygen gas, respectively. The reported transparent TFT structure was a bottom-gate type, consisting of indium-tin-oxide and aluminium as gate electrode and source/drain electrodes, respectively. The optical transmittance of a-IZO films in the visible region was greater than 84%. The a-IZO TFTs showed that the field effect saturation mobility, I-on/I-off ratio, sub-threshold swing, and threshold voltage were extracted to give 13.09 cm(2)/V-s, 4 x 10(5), 0.42 V/decade, and 3.54 V. respectively. The reported a-IZO TFT with high dielectric constant HfO2 gate dielectric sputtered at room temperature presents high quality characteristics, which can be used as good candidate for the application of low-temperature fabricated optoelectronic devices on organic flexible substrates. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.11.039
Appears in Collections:期刊論文

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.