Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71499
標題: Stress evolution during isochronal annealing of Ni/Si system
作者: Tsai, C.J.
Yu, K.H.
關鍵字: annealing;stress;nickel silicides;thin-films;c49 tisi2;silicides;silicon;si;multilayers;stability
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 350, Issue 1-2, Page(s) 91-95.
摘要: 
Nickel films on Si(001) substrates were annealed in vacuum at a ramp rate of 5 degrees C/min. The total force per unit width (F/W) in the film during isochronal annealing was determined using a laser scanning method for substrate curvature measurements. During heat treatment, several abrupt changes of F/W in the film were observed. PI clear correlation between the evolution of FIN and the phase formation sequence was found. X-ray diffraction and sheet resistance measurements revealed that these changes of F/W coincide with the formation sequence of Ni,Si, NiSi, and NiSi2. (C) 1999 Elsevier Science S.A. All rights reserved.
URI: http://hdl.handle.net/11455/71499
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(99)00286-2
Appears in Collections:期刊論文

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