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|標題:||Stress evolution during isochronal annealing of Ni/Si system||作者:||Tsai, C.J.
|關鍵字:||annealing;stress;nickel silicides;thin-films;c49 tisi2;silicides;silicon;si;multilayers;stability||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 350, Issue 1-2, Page(s) 91-95.||摘要:||
Nickel films on Si(001) substrates were annealed in vacuum at a ramp rate of 5 degrees C/min. The total force per unit width (F/W) in the film during isochronal annealing was determined using a laser scanning method for substrate curvature measurements. During heat treatment, several abrupt changes of F/W in the film were observed. PI clear correlation between the evolution of FIN and the phase formation sequence was found. X-ray diffraction and sheet resistance measurements revealed that these changes of F/W coincide with the formation sequence of Ni,Si, NiSi, and NiSi2. (C) 1999 Elsevier Science S.A. All rights reserved.
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