Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71503
標題: The strengthening mechanism of DLC film on silicon by MPECVD
作者: Sung, S.L.
Guo, X.J.
Huang, K.P.
Chen, F.R.
Shih, H.C.
關鍵字: diamond-like carbon;silicon;microwave plasma enhanced chemical vapor;deposition;diamond-like carbon;amorphous-carbon;microwave plasma;hydrogen gas;dc bias;deposition;nucleation;discharge;methane
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 315, Issue 1-2, Page(s) 345-350.
摘要: 
Diamond-like carbon (DLC) coatings were successfully produced on the silicon wafer by a microwave plasma enhanced chemical vapor deposition (MPECVD) with the precursor gases of methane, hydrogen and argon. High resolution transmission electron microscopy (HRTEM) was applied to analyze the nano-particles in the coating. Both diamond and silicon carbide (SiC) nano-clusters of sizes ranging from 2 to 5 nm were observed in the DLC films. The dispersion of nano-clusters of diamond and SiC improves the film quality in terms of crystallinity and hardness of the DLC coating significantly. (C) 1998 Elsevier Science S.A.
URI: http://hdl.handle.net/11455/71503
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(97)00782-7
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