Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/71504
標題: Thin film encapsulation of DSSCs on plastic substrate
作者: Huang, L.T.
Lin, M.C.
Chang, M.L.
Wang, R.R.
Lin, H.C.
關鍵字: Aluminum oxynitride film;Reactive magnetron sputtering;Polyethylene;naphthalate;Dye-sensitized solar cells;Gas permeation;dissociation;coatings
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 517, Issue 14, Page(s) 4207-4210.
摘要: 
Aluminum oxynitride (AlO(x)N(y)) films were deposited on polyethylene naphthalate (PEN) substrates using a reactive radio frequency (RF) magnetron sputtering system by varying the nitrogen flow rate. Experimental results show that the AlO(x)N(y) films deposited on PEN substrate exhibit a pebble-like surface morphology. The deposition rate decreases slightly upon increasing the nitrogen flow rate. The surface roughness of the deposited AlO(x)N(y) films also decreases upon increasing the nitrogen flow rate. The AlO(x)N(y) film deposited at a nitrogen flow rate of 15 sccm exhibited the lowest water vapor transmission rate of 0.02 g/m(2) . day. Meanwhile, the passivation of AlO(x)N(y) films can effectively improve the long-term stability of plastic DSSC. Their power conversion efficiency can sustain 50% of the initial values even after 300 h. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/71504
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.02.045
Appears in Collections:期刊論文

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