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http://hdl.handle.net/11455/72251
標題: | 450℃退火對Cz矽晶內氧凝聚遲滯現象所造成的影響 An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450℃Anneal in Czochralski Silicon |
作者: | 貢中元 徐瑋 劉進明 |
關鍵字: | 氧凝聚遲滯;氧凝聚物;二溫階退火;三溫階退火;微觀結構 | 出版社: | 國立中興大學工學院;Airiti Press Inc. | Project: | 興大工程學報, Volume 8, Issue 2, Page(s) 21-29. | 摘要: | 本文以二溫階(450℃-1000℃)和三溫階(1150℃-450℃-1000℃)退火實驗來研 究 Cz 矽晶內的氧凝聚行為。在二溫階的實驗中觀察到很明顯的氧凝聚遲滯現象,然而在三 溫階實驗中氧凝聚遲滯現象則不明顯。在三溫階實驗第一步驟 1150 ℃的高溫退火,會使氧 凝聚遲滯現象在較短的孕核時間內發生。 我們發現矽晶內的微觀缺陷隨著 450 ℃的孕核時 間而改變。二溫階與三溫階退火所產生的微觀缺陷隨 450 ℃退火時間的變化是十分類似的 。 Two-step(450℃-1000℃)and three-step (1150℃-450℃-1000℃)annealing experiments were carried out to study oxygen percipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step anneal,while the retardation during the three-step anneal was less pronounced. With the three-step anneal, the first hight temperature 1150 ℃ anneal in N ?? ambient caused the retardation to occur at shorter nucleation times. The microstructure characteristics as function of uncleation ( 450 ℃) anneal time were similar in the two-step and three-step annealed samples. |
URI: | http://hdl.handle.net/11455/72251 | ISSN: | 1017-4397 |
Appears in Collections: | 第08卷 第2期 工學院 |
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