Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/72280
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dc.contributor.author貢中元zh_TW
dc.contributor.author戴寶通zh_TW
dc.contributor.author歐沐怡zh_TW
dc.contributor.author詹森博zh_TW
dc.contributor.other工學院zh_TW
dc.date1999-05zh_TW
dc.date.accessioned2014-06-11T06:47:10Z-
dc.date.available2014-06-11T06:47:10Z-
dc.identifier.issn1017-4397zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/72280-
dc.description.abstractThe chemical-mechanical polishing(CMP) process is a critical step in the manufacturing of deep sub-micron device. However, little is known about its control mechanism and how does it affect the wafer surface with atomic scale roughness. Surface roughness control during the CMP process is the key process to prepare a smooth, defect-free silicon starting surfaces. In this research, we confirm that following parameters, such as pad materials, slurry supplier, and slurry pH value strongly influence the final surface roughness of a CMP silicon wafer. An appropriate process parameter is suggested for CMP of silicon materials.en_US
dc.description.abstract化學機械研磨(CMP)技術是一個重要的IC製程技術。未來矽晶圓的表面粗糙度規 格將趨近於原子級(Atomic scale)尺寸,同時下一代十二吋矽晶圓的表面不均勻度限制更為嚴 格,因此必須在CPM的物理機制與原理有深入的研究與探討。 本論文中針對矽晶圓的化學機械拋光研磨,做一有系統的實驗。從施加壓力、轉速、研 磨墊、研磨劑pH值及濃度等對矽材質蝕刻率、不均勻度及表面粗糙度之影響實驗中發現, 表面粗糙度與研磨墊材質及所施加壓力十分密切。此結果可從Liu等人所提出的物理研磨機 制做合理的解釋。 為了達到最佳化的表面微粗糙度及較低的不均勻度,同時要求較高蝕刻率,從實驗結果 可以找出矽晶圓研磨參數。另外從實驗結果得到矽蝕刻率與施加壓力成線性關係,此結果與 Preston研磨二氧化矽所得的線性方程式一致。 CMP是含有高污染源的製程,研磨後晶圓表面的塵粒及金屬離子污染需被去除乾淨。 研磨後矽材質是具疏水特性,這與其他矽化物材質研磨後成親水性的表面不同,需要較特殊 的清洗方法。在此研究中我們找到一個適合矽材質研磨後的清洗方法,使潔淨處理後的塵粒 (>0.24微米)少於500個。清洗後晶圓表面金屬離子污染量極低,十分接近TXRF的檢測極 限。zh_TW
dc.language.isozh_TWzh_TW
dc.publisher國立中興大學工學院;Airiti Press Inc.zh_TW
dc.relation興大工程學刊, Volume 10, Issue 2, Page(s) 27-34.zh_TW
dc.subject化學機械研磨zh_TW
dc.subject矽晶zh_TW
dc.title矽材質化學機械研磨製程之研究zh_TW
dc.typeJournal Articlezh_TW
item.languageiso639-1zh_TW-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
Appears in Collections:第10卷 第2期
工學院
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