Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/72289
標題: 平行計算空間相關之波茲曼方程式並運用於Mosfet之閘極電流
Parallel Computation of Space-Dependent Boltzmann Transport Equation for Gate Current in Mosfet's
作者: 林泓均
許源卿
關鍵字: 多指令多資料;熱電子;閘極電流;波茲曼方程式;深次微米
出版社: 國立中興大學工學院;Airiti Press Inc.
Project: 興大工程學刊, Volume 10, Issue 3, Page(s) 57-71.
摘要: 
一套運用多指令多資料之元件模擬器來計算 MOSFET 中熱電子所產生之閘極電流
已發展出來,此模擬器使用改良收斂性的數值方法解波茲曼方程式,並比較單一與多處理器
之執行效率。經評估證明其執行速度幾乎正比於處理器數目,這表示處理器間資料交換與其
他非計算時間非常少。總之,此一新方法適合於平行計算深次微米或更小之元件以大幅降低
執行時間。

A new parallel device simulator using multiple instruction, multiple
data (MIMD) to calculate hot-electron induced gate current in MOSFET's by
solving the space-dependent Boltzmann Transport Equation (BTE) with an improved
discretization technique for better convergence characteristics has been
developed. A performance comparison between a single processor and multiple
processors is also presented. It was proved that the computation speed was
nearly proportional to the number of processors, which means the time for data
communication between processors or other miscellaneous actions is quite little.
In summary, this new space-dependent BTE solver is appropriate for significantly
reducing the execution time for parallel deep-submicron or beyond device
simulations.
URI: http://hdl.handle.net/11455/72289
ISSN: 1017-4397
Appears in Collections:第10卷 第3期
工學院

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