Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/72290
標題: 消除CMOS製程產生的高密度疊差
Elimination+of+High+Density+Stacking+Faults+in+CMOS+Process
作者: 貢中元
許靜宜
關鍵字: 疊差;去疵;離子驅入
出版社: 國立中興大學工學院;Airiti Press Inc.
Project: 興大工程學刊, Volume 10, Issue 3, Page(s) 73-78.
摘要: 
Haze arising from a high density of stacking faults is observed in CMOS
process wafers. The 1200 ℃ drive-in process is observed to be the main process
to bring contamination to wafer surface and generate stacking fault nuclei. By
increasing the HCl gettering temperature from 1000 ℃ to 1050 ℃ prior to the
drive-in process, the stacking fault density can be effectively reduced. Proper
adjustment on the field implantation dosage and energy can also inhibit the
nucleation of stacking faults. The information obtained in this research is very
useful to a fine tuning of a CMOS process.

經過CMOS製程後的晶片可以觀察到高密度疊差(stacking faults)所形成的模糊
不清( haze )的區域。從本實驗的結果證明 1200 ℃離子驅入( drive-in )製程是使污
染物形成疊差凝結核的主要原因。 如果將 HCl 去疵溫度從 1000 ℃增加到 1050 ℃,可以
有效地減少疊差密度。適當的調整離子植入的劑量及能量,亦可以防止凝結核的形成。本實
驗的結果,有助於改善 CMOS 製程,使晶片表面疊差密度大量減少。
URI: http://hdl.handle.net/11455/72290
ISSN: 1017-4397
Appears in Collections:第10卷 第3期
工學院

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