Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/72298
標題: 在鈷/鈦/矽與鈷/鎳/矽系統不同中間層對鈷矽化物生成的影響
作者: 郭昇鑫
蔡哲正
關鍵字: 矽化物;表面應力;曲率量測
出版社: 國立中興大學工學院;Airiti Press Inc.
Project: 興大工程學刊, Volume 11, Issue 1, Page(s) 53-60.
摘要: 
The effects of interlayers that affected the formation of Co silicides in the reaction systems
of Co/Ti/Si(100) and Co/Ni/Si(100) were studied using a laser scanning method for substrate curvature
measurements and X-ray diffraction. The results showed that the formation temperatures of CoSi and
CoSi□ in the Co/Ti/Si(100) system were significantly delayed by 246℃ and 243℃ respectively
when compared to those in the Co/Ni/Si(100) system. At the temperature of 455℃, the Co□Si phase
was observed in the Co/Ni/Si(100) system while the phase was missing in the entire reaction sequence
for the Co/Ti/Si(100) system. During the annealing process, the maximum surface stress change in the
Co/Ti/Si(100) system was 30% less than that in the Co/Ni/Si(100). With the annealing temperature
rising, Co□TiO□ phase was detected and Co□Ti□Si□ was also detected at a temperature of
746℃ for the Co/Ti/Si(100) system. The CoSi□ phase obtained from the system of Co/Ti/Si(100)
have better directional relation of CoSi□(200) with the Si substrate than that obtained from the
Co/Ni/Si(100).

本實驗利用掃瞄式雷射測基材彎曲度系統與X光繞射的方法來探討鈷╱鈦╱矽與
鈷╱鎳╱矽系統,中間層對鈷矽化合物生成的影響。結果明顯地發現前者比後者在CoSi相
及CoSi□相生成溫度分別延緩了246℃及243℃。在鈷╱鎳╱矽系統中,於455℃發現有
Co□Si相的生成;而鈷╱鈦╱矽系統中則是直接跳過。在退火過程中,鈷╱鈦╱矽系統的
最大表面應力曲線變化相較鈷╱鎳╱矽系統來得小,其約降低了30﹪左右。在鈷╱鈦╱矽
系統,隨退火溫度上升而偵測到Co□TiO□的化合物,並在其後746℃發現有CO□Ti□Si□
相的過渡生成。就在Si(100)基材上CoSi□(200)的方向性而言,鈷╱鈦╱矽系統較鈷╱
鎳╱矽系統來得好。
URI: http://hdl.handle.net/11455/72298
ISSN: 1017-4397
Appears in Collections:第11卷 第1期
工學院

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