Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/7301
標題: 高耦合變壓器與低功率混頻器之研究
Research on high coupling transformer and low power mixer
作者: 蔡明璋
Tsai, Ming-Chang
關鍵字: transformer;變壓器;mixer;混頻器
出版社: 電機工程學系所
引用: [1] C. Patrick Yue ,S. Simon Womg ,”On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC's”,IEEE JSSC ,vol. 33,May 1998, pp.743-752 [2] C. Patrick Yue ,S. Simon Womg ,”Physical Modeling of Spiral Inductors on Silicon”,IEEE trans. Electron Device, vol. 47,Mar. 2000, pp. 560-568 [3] Ali. M. Niknejad, R. G. Meyer, “Analysis of Eddy-Current Losses Over Conductive Substrates with Applications to Monolithic Inductors and Transformers,” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,VOL. 49 NO. 1,JANUARY 2001,pp.166-176 [4] Hector J. De Los Santos,”On the Ultimate Limits of IC Inductors-An RF MEMS Perspective,” IEEE Electronic Components and Technology Conferencr 2002 ,pp. 1027-1031 [5] Chih-Chun Tang ,Chia-Hsin Wu ,Shen-Iuan Liu,”Miniature 3-D inductors in standard CMOS Process” IEEE JSSC ,vol. 37, April 2002,pp. 471-480 [6] Zolfagharic ,A.;Chan ,A.;Razavi ,B.;”Stacked inductors and Transformers in CMOS Technology,” IEEE JSSC vol. 36, April 2001,pp. 620-628 [7] Yo-Sheng Lin,”Implementation of Perfect-Magnetic-Coupling Ultralow-Loss Transformer in RFCMOS Technology,”IEEE ELECTRON DEVICELETTERS. VOL. 26. NO. 11.NOVEMBER 2005,pp. 832-835 [8] J. Long,”Monolithic Transformers for Silicon RF IC Design”, IEEE JSSC,pp. 1368-1382 ,Sept. 2000,pp. 1368-1382 [9] A. Italia, F. Carrara, E. Ragonese, T. Biondi, A. Scuderi, G. Palmisano,”The Transformer Characteristic Resistance and its application to the Performance Analysis of silicon Integrated Transformers” IEEE Radio Frequency Integrated Circuits, 2005,pp. 597-600 [10] Sher Jiun Fang, See Tanr Lee, and David J. Allstot,”A 2GHz CMOS Even Harmonic Mixer for Direct Conversion Receivers,” IEEE 2002,pp. 807-810 [11] S. Zhon, M. C. Chang,”A CMOS Passive Mixer with Low Flicker Noise for Low-Power Direct-Conversion Receiver,” IEEE JSSC vol. 40, pp. 1084-1093, May 2005 [12] Eric A. M. Klumperink, Simon M. Loussma, Gerard J. M. Wienk ,and Bram Nauta, “A CMOS Switched Transconductor Mixer,”IEEE J. of Solid-State Circuits VOL.39, No.8, August 2004,pp. 1231-1240 [13] H.M. Greenhouse, “Design of Planar Rectangle Microelectronic Inductors”, IEEE Trans. Parts, Hybrids, Packag., vol. 10. pp.101-109, June 1974. [14] F.W. Gupta, Inductance Calculations, Dover Publication Inc, New York, 1946. [15] A. L. Niknejad, R. G. Meyer, “Design, Simulation and Application of Inductors and Transformers for Si RF ICs,” Kluwer Academic Publishers, 2003,pp. [16] William B. Kuhn, Noureddin M. Ibrahim,” Analysis of Current Crowding Effects in Multiturn Spiral Inductors” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 49 NO. 1, JANUARY 2001.pp.31-38 [17] Ban-Leong Ooi, Dao-Xian Xu, Pang-Shyan Kooi, and Fu-Jiang Lin,” An Improved Prediction of Series Resistance in Spiral Inductor Modeling With Eddy-Current Effect,” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 50, NO. 9, SEPTEMBER 2002,pp.1143-1149 [18] K. Y. Tong and C. Tsui, ”A Physical Analytical Model of Multilayer On-Chip Inductor,” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 53, NO. 4, APRIL 2005,pp.1143-1149 [19] Jun Zou, Chang Liu, Drew R. Trainor,Jack Chen,Jose E. Schutt-Aine, Patrick L.Chapman,” Development of Three-Dimensional Inductor Using Plastic Deformation Magnetic Assembly(PDMA),” IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51 NO. 4, APRIL 2005,pp.1143-1149 [20] B. Razavi, “RF Microelectronics”, Prentice Hall, 1997. [21] Behzad Razavi, “Design Of Analog CMOS Integrated Circuits,” McGraw-Hill, 2001. [22] David M. Pozar,”Microwave Engineering” [23] Vojkan Vidojkovic,Johan van der Tang,”Low Votage,Low Power Folded-Switching Mixer with Current-Reuse in 0.18um CMOS,IEEE 2004,pp. 569-572 [24] Vidojkovic, V., et al.,”Mixer Topology Selection for a 1.8-2.5 GHz Multi-Standard Front-End in 0.18um CMOS”, ISCAS ,2003 [25] Carsten Hermann, Marc Tiebout,,” A 0.6-V 1.6-mW Transformer-Based 2.5-GHz Downconversion Mixer With +5.4-dB Gain and 2.8-dBm IIP3 in 0.13-um CMOS”, IEEE,2005,pp. 488-495 [26] Farsheed Mahmoudi and C. Andre T.Salama,“8GHz, 1V, High Linearity,Low Power CMOS Active Mixer, IEEE, 2004,pp. 401-404 [27] Vojkan Vidojkovic, Johan van der Tang,” A Low-Voltage Folded -Switching Mixer in 0.18-um CMOS”,IEEE,2005,pp. 1259-1264
摘要: 
本文首先針對由傳統變壓器改變其耦合方式,由左右交叉耦合變成上下堆疊耦合,探討其在面積、耦合量上的改善,並且更近一步的使用多層耦合的方式,來更有效率的縮小其面積,並探討在多層耦合的架構下,耦合量和品質因數的選擇對最大有效功率輸出的影響,以及內細外粗的佈局架構對品質因數的特性改善,接著利用多層耦合變壓器的方式來設計Balun。
第二部份是低功率混頻電路設計,主要概念是將原本傳統雙端平衡混頻架構的串級偏壓方式切割成兩部份,個別予於偏壓,且加入一個LC電路來達到低功率的要求,主要是以TSMC 0.18um CMOS製程實現之。

The thesis includes two parts, the first part discusses the device structure of the conventional transformer. It contains planar and stack structures. Thesis adopt stack structure to improvement of chip area and coupling coefficient Using multi-layers structure saves chip area is studied in this thesis. Generally, the coupling coefficient and quality factor, composited the transformer characteristic resistance, are the key factors during the design on chip transformer. However, quality factor and transformer characteristic resistance relation with direct radio. Hence, the taper architecture is to improve quality factors. Final a multi-layers structure is used to design the Balun.
In part two, a low power mixer is design to operate at low supply voltages by using switches exclusively connected to the supply voltages. The TSMC 0.18um CMOS process is adopted to implement the circuit. Mixing is achieved by adopting two transconductors with cross-coupled outputs, which are alternatingly activated by the switches. Moreover, adoption of LC circuit to
achieve the low voltage is demonstrated in the circuit.
URI: http://hdl.handle.net/11455/7301
其他識別: U0005-0208200716145600
Appears in Collections:電機工程學系所

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