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標題: 寬頻磷化銦鎵/砷化鎵雙載子電晶體混頻器及金屬氧化物半導體射頻前端電路之研製
The Design and Realization of Wideband GaInP/GaAs HBT Mixer and CMOS RF Front-end Circuits
作者: 江銘祥
Chiang, Ming-Hsing
關鍵字: Mixer;混頻器;GaInP/GaAs;RF;Front-end;寬頻磷化銦鎵/砷化鎵;射頻;前端電路
出版社: 電機工程學系

A wideband GaInP/GaAs HBT mixer has been implemented on this thesis, which is used in the optical fiber system. Since the latest trend shows that wireless communication system is toward to low cost and high integration, so this thesis use CMOS process to implement the key components of RF front-end circuits─low noise amplifier and voltage control oscillator.
The measurements results of wideband mixer show that the input frequency can operate up to 8GHz and have 11dB gain. Besides the measurements results of single stage low noise amplifier show 6dB gain and 4dB noise figure, and voltage control oscillator with 2.163Ghz of output frequency is also demonstrated, the tuning range of voltage control oscillator is 60MHz and the phase noise is -70dBc/Hz at 100KHz offset frequency.
The measurements results verify our design methodology of RF front-end circuits and predict the high frequency performance of circuits effectively.
Appears in Collections:電機工程學系所

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