Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/7655
DC FieldValueLanguage
dc.contributor林祐仲zh_TW
dc.contributorYow-Jon Linen_US
dc.contributor劉漢文zh_TW
dc.contributorHan-Wen Liuen_US
dc.contributor.advisor汪芳興zh_TW
dc.contributor.advisorFang-Hsing Wangen_US
dc.contributor.author林瑞展zh_TW
dc.contributor.authorLin, Jui- Chanen_US
dc.contributor.other中興大學zh_TW
dc.date2008zh_TW
dc.date.accessioned2014-06-06T06:40:18Z-
dc.date.available2014-06-06T06:40:18Z-
dc.identifierU0005-2308200714245000zh_TW
dc.identifier.citation[1] 曲喜新、楊邦朝、姜節儉、張懷武編著,“電子薄膜材料”,北京科學出版社 (1996), p.93。 [2] 許國銓,“科技玻璃-高性能透明導電膜玻璃”,材料與社會,84期(82), 110-119。 [3] Tadatsugu Minami, “Transparent conducting oxide semiconductors for transparent electrodes”, Semicond. Sci. Technol., 20 (2005), S35–S44. [4] B. H. Choi and H. B. Im, Thin Solid Films 193/194, (1990) 712. [5] Sun Yanfeng, Weifeng Liu, He Zhidan , Liu Shaolin, Zou Zhao Yi, Guotong Du,“ Novel properties of AZO film sputtered in Ar+H2 ambient at high temperature”, Vacuum, 80 (2006), 981-985. [6] 楊明輝,“金屬氧化物透明導電材料的基本原理”,工業材料,第179期,2001年11月,pp.134。 [7] 洪連輝、劉立基,魏榮君編譯,“固態物理導論”,高立圖書有限公司,第七版。 [8] 蔡明倫,“ITO 鍍膜於PET 基板上之研究”,國立中央大學光電科學研究所碩士論文,民國94年7月。 [9] L. Gupta, A. Mansingh and P.K. Srivastava,“ Band gap Narrowing and the Band Structure of Tin-Doped Indium Oxide Films”, Thin Solid Films, 176(1989), p.33~44. [10] Stephen A. Campbell,“The Science and Engineering of Microelectronic Fabrication” , 2nd edition, Oxford University Press, 2001. [11] 莊達人,“VLSI製造技術”,高立圖書有限公司,民國93年6月20日五版四刷。 [12] 林家康,“以新穎之奈米夾層技術提升ZnO薄膜之導電度”,國立成功 大學材料科學及工程學系碩士論文,民國92年6月。 [13] Kyoo Ho Kim, Rachmat Adi Wibowo, Badrul Munir,“ Properties of Al-doped ZnO thin film sputtered from powder compacted target”, Materals Letters, 60 (2006), 1931-1935. [14] Byeong-Yun Oh, Min-Chang jeong, Doo-Soo kim, WoongLww, Jae-Min Myoung,“ Post-annealing of Al-doped ZnO films in hydrogen atmosphere”,Journal of Crystal Growth, 281 (2008), 475-480. [15] J.Hupkes, B.Rech , O. Kluth, T. Repmann, B. Zwaygardt, J.muller, R. Dres, M. Wutig“Surface textured MF-sputtered ZnO films for microcrystalline silicon-based thin-film solar cells”, Solar Energy Materials & Solar cells, 90 (2006), 3054-3060. [16] Byeong-yun Oh,Min-Chang Jeong,Jae-Min Myoung, “ Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films”, Applied Surface Science, 253 (2007), 7157-7161. [17] Weifeng Liu, Guotong Du, Yanfeng Sun, Yibin Xu, Tianpeng Yang ,Xinsheng Wang a, Yuchun Chang b, Fabin Qiu, “Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H2-induced property changes”, Thin Solid Films 515 (2007) 3057–3060.zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/7655-
dc.description.abstract本論文探討利用射頻濺鍍系統濺鍍AZO薄膜之電、光特性及不同製備條件之AZO薄膜應用於非晶矽薄膜太陽電池對電性之影響。在這篇論文中,使用氬氣做濺鍍背景氣體,並改變玻璃基板溫度及射頻功率對薄膜進行電學特性、光學特性與結構分析。固定工作壓力5×10-2 torr,沉積溫度從室溫提升至380℃,射頻功率從40瓦提升至160瓦。在可見光譜(400nm-700nm)範圍均有85%以上之穿透率。根據Burstein-Moss效應,薄膜光學特性的改變與電學特性有ㄧ定相關性,其光學能隙隨自由載子濃度增加而愈大。在薄膜結構上,利用X光薄膜繞射儀使用CuKα波長對AZO材料做結晶性分析,並利用掃描式電子顯微鏡(SEM)觀察薄膜表面型態,其粗糙度隨著沉積溫度有增加的趨勢。為了減少AZO片電阻值,我們使用氫電漿對薄膜後處理15至120分鐘,其電阻值有明顯下降。經由氫電漿後處理120分鐘, AZO片電阻值從516.3 Ω/sq.降至90.1 Ω/sq.,然而過高氫電漿功率容易對薄膜造成表面傷害並增加電阻值。利用此方法可以有效地改善AZO薄膜電特性,應用在非晶矽薄膜太陽能電池上可改善其短路電流及效率。zh_TW
dc.description.abstractAluminum doped zinc oxide (AZO) thin films deposited by RF sputter and the effects on electrical properties of amorphous silicon thin-film solar cells were studied. The electrical, optical, and structural properties of the AZO films were investigated as a function of the substrate temperature and the RF power with a background gas Ar. Argon gas pressure during deposition was kept at 5×10-2 torr. The substrate temperature and the RF power were ranging from 27 to 380℃ and 40 to 160 W, respectively. The transmittances of all the samples were above 85% in the wavelength of 400-800nm. The optical properties of the films, which change in accordance with the Burstein-Moss effect, are consistent with the observed changes in electrical properties. Optical band gap widens with carrier concentration. For structural analysis, crystallinity and surface morphology of AZO films were investigated by X-ray diffraction (XRD) and SEM, respectively. It is found that the roughness of the samples increases with substrate temperature. In order to improve the electrical characteristics of AZO films, a novel post H2-plasma treatment for 15-120 min was performed. The sheet resistances of the AZO films decreased form 516.3 to 90.1 Ω/sq. However, high H2-plasma power would damage the film surface and increase the sheet resistance. The post H2-plasma treated AZO films had been applied for amorphous silicon thin-film solar cells and better short current and efficiency of cells were obtained.en_US
dc.description.tableofcontents誌謝 i 中文摘要 ii 英文摘要 目次 iii iv 圖目次 vii 表目次 ix 第一章 緒論 1 1.1 透明導電膜 1 1.2 透明導電膜的應用 1 1.3 研究動機與目的 3 第二章 文獻回顧與基礎理論 5 2.1 氧化鋅薄膜文獻回顧 5 2.1.1 氧化鋅結構分析 5 2.1.2 氧化鋅摻雜3A族之電學特性 7 2.1.3 氧化鋅摻雜3A族之光學特性 8 2.2 濺射原理 12 2.2.1 電漿原理 13 2.2.2 濺射機制 13 2.2.3 射頻濺鍍法 13 2.2.4 薄膜成長機制 14 2.2.5 薄膜型態 16 第三章 實驗步驟與方法 18 3.1 實驗流程 18 3.2 實驗材料 19 3.3 薄膜製程 19 3.3.1 濺鍍系統 19 3.3.2 實驗參數與步驟 19 3.4 薄膜分析 20 3.4.1 鍍膜速率之量測 20 3.4.2 電性量測 20 3.4.3 光學量測 21 3.4.4 結構分析 21 3.4.5 表面型態分析 22 第四章 結果與討論 24 4.1 沉積速率 24 4.2 電性量測 24 4.3 基板溫度對氧化鋅薄膜特性影響 26 4.3.1 結構分析 26 4.3.2 成份分析 29 4.3.3 表面分析 33 4.3.4 光學分析 35 4.4 薄膜穩定性 38 4.4.1 電性分析 38 4.4.2 光學分析 39 4.5 改變工作距離對AZO薄膜之影響 41 4.5.1 結構分析 41 4.5.2 光學分析 41 4.6 氫電漿後處理 42 4.7 AZO薄膜太陽能電池 46 第五章 結論 49 5.1 總結 49 5.2 未來工作 49zh_TW
dc.language.isoen_USzh_TW
dc.publisher電機工程學系所zh_TW
dc.relation.urihttp://www.airitilibrary.com/Publication/alDetailedMesh1?DocID=U0005-2308200714245000en_US
dc.subject射頻zh_TW
dc.subjectRFen_US
dc.subject氫電漿zh_TW
dc.subject氧化鋅zh_TW
dc.subjectH2 plasmaen_US
dc.subjectAZOen_US
dc.title應用於太陽能電池氧化鋅摻鋁薄膜之研製zh_TW
dc.titleFabrication of AZO films for solar cell applicationsen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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