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標題: 複晶矽薄膜電晶體與矽金氧半發光二極體之電性分析與元件模擬
Electrical Characteristics and Simulations of LTPS TFT and Si MOS LED
作者: 曾志峰
Tseng, Chih-Feng
關鍵字: LTPS TFT;複晶矽薄膜電晶體;Si MOS LED;leakage current;LPD;EL;矽金氧半發光二極體;漏電流;液相沉積法;電致發光
出版社: 電機工程學系所
引用: [1]陳志強編著,LTPS低溫複晶矽顯示器技術,全華科技圖書股份有限公司,pp. 2-1,2-2,2-7 [2]KITTEL 固態物理學導論 VOL.7 高麗圖書有限公司 [3]施敏原著,黃調元譯,半導體元件物理與製作技術,國立交通大學出版社,pp.176~177 [4]安毓英、曾小東編著,光學感測與測量,五南圖書出版股份有限公司,pp.262~63 [5]C. W. Liu,M. H. Lee,Miin-Jang Chen,I. C. Lin,and Ching-Fuh Lin,"Room-Temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes,Appl . Phys . Lett .,76,pp. 1516-1518,2000. [6]Ching-Fuh Lin,Cheewee Liu,Miin-Jang Chen,Ming-Hung Lee,and I-Cheng,Tunneling Induced Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon”,SPIE,Proceedings,Vo1. 3953, pp. 37-45,2000. [7]M. J. Chen,J. L. Yen,J. Y. Li,J. F. Chang,S. C. Tsai,and C. S. Tsai,“Stimulated emission in a nanostructured silicon pn junction diode using current injection”,APPLIED PHYSICS LETTERS VOLUME 84,NUMBER 12,P.2163-2165(2004) [8]Martin A. Green,Jianhua Zhao,Aihua Wang,Peter J. Reece,and Michael Gal,”Efficient silicon light-emission diodes”,Nature,vol.412,p.805-808(2001) [9]L. Dal Negro, M. Cazzanelli, L. Pavesi, S. Ossicini, D. Pacifici,G.. Franzo,F. Priolo,F. Iacona,”Dynamics of stimulated emission in silicon nanocrystals”,APPLIED PHYSICS LETTERS VOLUME 82,NUMBER 26,pp. 4636-4638(2003). [10]F Icona。G Franzo,EC Moreira,F Priolo J. Appl. Phys. 89(2001) 8354 [11]G. Franzo,V. Vinciguerra,F. Priolo Appl. Phys. A69(1999) ;G. Franzo,et al,Appl. Phys. Lett. 76(2000) 2167. [12]R. A. Soref,“Thin Solid Films” 294 (1997) 325. [13]M. HL,C.-Y. Yu,T.-H. Guo,C,-H. Lin,and C, W. Liu,”Electroluminescence From the Ge Quantum Dot Mos Tunneling Diodes”,IEEE ELECTRON DEVICE LETTERS,VOL 27. NO. 4. APRIL 2006. [14]N. Yamuachi et al, IEEE Trans. Electron Devices, vol. (38), pp. 55-59 (1991). [15]Luigi Colalongo et al, IEEE Trans. Electron Devices, vol. (44), pp. 2106-2112 (1997). [16]O.K.B.Lui et al, IEEE Trans. Electron Devices, vol. (45), pp. 213-217 (1997). [17]G.A. Armstrong et al. IEEE Electron Device Lett., vol. (7), pp. 315-318 (1997). [18]F.V. Farmakis et al., Solid-State Electron., vol. (44),pp. 913-916 (2000). [19]Philip M. Walker et al, IEEE Trans. Electron Devices, vol. (51), pp. 212-218 (2004). [20]Amit. Sehgal et al, IEEE Trans. Micrwave Theory And Techniques, vol. (53), pp. 2682-2687 (2005) [21]DESSIS User’s Manual, ISE TCAD 10 (2005)

Two topics are studied in this thesis as following:
Part 1:
The abnormal behavior of low field leakage current in low temperature polycrystalline silicon (LTPS) thin-film transistors is observed experimentally. The commercial TCAD simulator is used to investigate the possible physical mechanisms of this phenomenon. There is a qualitative agreement between experiments and TCAD simulations.
Part 2:
The ultra thin oxide used in the MOS tunneling diode is grown by liquid phase deposition (LPD) on Si wafer. Next, aluminum was deposited on oxide as gate electrode using evaporator. The aluminum was deposited on the backside as another electrode of MOS diode. We measured the electroluminescence (EL) and I-V characteristics of MOS LEDs and discuss the possible physical origins.
其他識別: U0005-2708200709130200
Appears in Collections:電機工程學系所

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