Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/7964
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dc.contributor.advisor江雨龍zh_TW
dc.contributor.author林智程zh_TW
dc.date2004zh_TW
dc.date.accessioned2014-06-06T06:40:47Z-
dc.date.available2014-06-06T06:40:47Z-
dc.identifier.urihttp://hdl.handle.net/11455/7964-
dc.description.abstract由於a-Si/SiO2雙能障結構(double barrier structure)元件在室溫下不易觀察到負微分電阻效應,而本實驗在量測其I-V特性曲線時,發現在應力(stress)的量測下,產生一類似負微分電阻效應的I-V特性曲線,且金屬電極表面產生變化,因此本研究主要探討在不同元件結構下,其物理現象與I-V特性曲線間的關係。本實驗將元件結構分成五種:1.量子型雙能障結構、2.非晶矽材料結構、3.非量子型雙能障結構、4.單能障結構、5.改變金屬電極材料。 實驗的結果顯示,在stress的過程中,金屬電極尚未產生變化前,I-V特性曲線為兩個背對背串接的二極體I-V特性曲線,在金屬電極產生變化後,即產生微分電阻效應的I-V特性曲線,若繼續做stress,則I-V特性曲線最後又會變成兩個背對背串接的二極體I-V特性曲線,整個金屬電極會完全變化,局部區域產生薄膜鼓起。比對五種不同元件結構的I-V特性曲線,顯示此負微分電阻效應的I-V特性曲線非量子穿邃效應所造成,而與二氧化矽能障材料、鉻金屬電極材料有關,兩者缺一不可。zh_TW
dc.description.abstractThe Negative Differential Resistance (NDR) effects of a-Si/SiO2 double barrier structure devices are not easy to be observed at room temperature. However, we find the I-V curve of NDR-like effect and the change on the surface of the metal electrode under the stress measurements. Therefore, this study investigates the relation between the physics phenomena and I-V curves on different device configurations. The experiments will be executed under the five different device configurations as follows, Quantum double barrier structure, amorphous silicon structure, Non-Quantum double barrier, single barrier structure, and changes of metal electrode materials. The experimental results show that there are the I-V curves of two pieces of diodes on back to back series before the metal electrode is changeless in stressing process. The I-V curve of NDR effect will appear after the metal electrode changes. If the stress is sustained, the I-V curve finally transfer to the I-V curves of two pieces of diodes on back to back series. Moreover, the whole metal electrode will change completely and the partial area of films will bulge. It shows that the I-V curve of NDR effect is caused by silicon dioxide barrier materials and Chromium metal electrode, not by non-quantum tunneling effect on the comparison between the five different device configurations. And further, the factors of silicon dioxide barrier materials and Chromium metal electrode must exist simultaneously.en_US
dc.description.tableofcontents目錄 第一章 簡介………………………………………………………………1 1-1 共振穿遂二極體………………………………………………1 1-2 研究動機………………………………………………………5 1-3 論文組織與架構………………………………………………6 第二章 雙能障結構元件…………………………………………………8 2-1 共振穿遂二極體……………………………………………….8 2-2 量子阱含有δ-doping的共振穿隧二極體……………………12 2-3 本質雙穩態(Intrinsic bistability)………………………… 13 2-4 聲子輔助穿隧(Phonon-assisted tunneling)……………….14 2-5 結構不對稱的共振穿隧二極體……………………………...15 第三章 雙能障結構元件之製作………………………………………..16 3-1 PECVD系統………………………………………………….16 3-2 a-Si:H N-layer氫化非晶矽薄膜試片清洗與製作…………18 3-2-1 試片的清洗………………………………………………18 3-2-2 a-Si:H N-layer氫化非晶矽薄膜試片製作…………….18 3-3 a-Si:H I-layer氫化非晶矽薄膜製作………………………..19 3-4 SiO2二氧化矽薄膜試片清洗與製作………………………...19 3-4-1 試片的清洗………………………………………………19 3-4-2 SiO2二氧化矽薄膜試片製作……………………………20 3-5氫化非晶矽薄膜及二氧化矽薄膜特性的量測與分析方法…….20 3-5-1 UV-VIS-NIR光譜儀……………………………………..20 3-5-2 暗電導率量測……………………………………………21 3-5-3 N&K analyzer……………………………………………22 3-5-4 C-V量測系統……………………………………………22 3-5-5 I-V 量測系統…………………………………………... 23 3-5-6 FTIR光譜儀……………………………………………..24 3-6 雙能障結構元件製程…………………………………………...26 3-6-1 元件結構…………………………………………………26 3-6-2 元件製程…………………………………………………..30 第四章 結果與討論…………………………………………………… 32 4-1 stress量測方式………………………………………………..32 4-2 I-V特性曲線與物理現象觀察………………………………..32 第五章 結論……………………………………………………………..58 第六章 未來工作………………………………………………………..59zh_TW
dc.language.isoen_USzh_TW
dc.publisher電機工程學系zh_TW
dc.subject負微分電阻zh_TW
dc.subject雙能障結構zh_TW
dc.subject應力zh_TW
dc.subject共振穿遂zh_TW
dc.title雙能障結構元件在電流誘發焦耳加熱下之電性研究zh_TW
dc.titleResearch in electrical characteristic of double barrier structure device under current-induce joule heatingen_US
dc.typeThesis and Dissertationzh_TW
item.languageiso639-1en_US-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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