Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/7969
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dc.contributor.advisor江雨龍zh_TW
dc.contributor.author杜偉新zh_TW
dc.date2004zh_TW
dc.date.accessioned2014-06-06T06:40:48Z-
dc.date.available2014-06-06T06:40:48Z-
dc.identifier.urihttp://hdl.handle.net/11455/7969-
dc.description.abstract一維矽奈米線由於量子限制效應,使其具有直接能隙,可以具有發光的特性。這項特性使得矽奈米線具有光電元件運用之潛力,值得深入研究。矽奈米線可以用不同的技術製作如雷射蒸鍍、物理性熱蒸鍍、以及化學氣相沈積等方法。 本研究以電子迴旋共振微波電漿加強化學氣相沈積系統(ECR-MW-PECVD),在0.1 Torr的高真空下成長矽奈米線。以電子槍蒸鍍將2nm的金薄膜沈積於矽晶片基板,並以加熱裂解後作為催化劑,以1200W功率,將流量為50 sccm Ar激發電漿,並下衝分解SiH4/H2+SiH4(5%)反應氣體在500℃基板溫度下沉積矽奈米線。 以場發射掃描式電子顯微鏡(FESEM)下所觀測的矽奈米線,其直徑介於30到100nm,長度可達1μm。X光能量散佈儀(EDS)的分析,結果顯示矽奈米線具有矽、金與氧等元素。以穿透式電子顯微鏡(TEM)觀測矽奈米線,發現其外圍包覆一層非晶氧化矽。以掃瞄式探針顯微鏡(SPM)觀測矽奈米線電性,發現其I-V曲線為一個正負電壓都可以導通的曲線。而矽奈米線的拉曼(Raman)光譜圖,顯示其具有量子限制效應。zh_TW
dc.description.abstractSilicon nanowires exhibit direct bandgap because of the quantum confinement effect. This unique optical property makes silicon nanowires having great potential for the application of opto-electronics devices. Silicon nanowires can be fabricated by various techniques, such as laser ablation, physical thermal evaporation and chemical vapor deposition. In this work, we fabricate silicon nanowires by electron-cyclotron resonance microwave plasma-enhance chemical vapor deposition (ECR-MW-PECVD). 2-nm-thick Au film is deposited by e-gun on silicon wafer as the catalyst. The deposition conditions of chamber pressure, MW power, substrate temperature, SiH4, H2 and Ar flow rate are 0.1 Torr, 1200 W, 500℃, 5, 95, and 50 sccm, respectively. Down-stream Ar plasma dissociates the SiH4 and H2 gases to grow the silicon nanowires from the Si-Au eutectic droplets. From the observation of the field emission scanning electron microscopy (FESEM) images, the diameters range from 30 to 100 nm and the length over than 1um of silicon nanowires could be obtained. The spectrum of the energy dispersive X-ray spectroscopy (EDS) reveals the existence of Si, O and Au in the samples. From the observation of the transmission electron microscopy (TEM) images, there is a thin amorphous silicon oxide layer sheathing the crystalline core of the SiNW. From the observation of the scanning probe microscopy (SPM) to detect electrical property of SiNW, the I-V curve is a bi-directional conduction. And the Raman spectra of SiNW reveal that it has the quantum confinement effect.en_US
dc.description.tableofcontents第一章、緒論 1.1 奈米線的介紹…………………………………………………1 1.2 研究動機與目的………………………………………………3 第二章、文獻回顧與理論背景 2.1 矽奈米線的簡介 …………………………………………… 4 2.2 矽奈米線之成長方法 ……………………………………… 5 2.3 矽奈米線之成長機制……………………………………… 12 2.4 矽奈米線的應用…………………………………………… 14 第三章、實驗方法與量測 3.1 ECR-CVD系統 3.1.1反應腔體……………………………………………… 17 3.1.2 進氣系統……………………………………………… 18 3.1.3 抽氣系統……………………………………………… 18 3.1.4 電漿產生系統………………………………………… 19 3.1.5 廢氣處理系統………………………………………… 19 3.2 矽奈米線的製備 3.2.1沈積條件…………………………………………………20 3.2.2 ECR-CVD操作步驟………………………………………22 3.3 實驗參數設計 3.3.1沈積壓力…………………………………………………25 3.3.2 沈積溫度……………………………………………… 25 3.3.3 微波功率……………………………………………… 26 3.3.4 Ar流量與矽甲烷流量比(SiH4/H2+SiH4)…………… 27 3.3.5 催化劑的探討………………………………………… 27 3.4 量測儀器之原理與方法 3.4.1 場發射掃瞄式電子顯微鏡(FESEM)……………………29 3.4.2 穿透式電子顯微鏡(TEM)………………………………30 3.4.3 掃瞄式探針顯微鏡(SPM)……………………………31 3.4.4 拉曼(Raman)光譜儀……………………………………32 第四章、結果與討論 4.1 矽奈米線的FESEM分析 4.1.1 催化劑.......................................34 4.1.2 矽奈米線的上視圖與橫截面圖……………………… 35 4.1.3 EDS分析…………………………………………………38 4.2 矽奈米線的TEM分析……………………………………… 40 4.3 矽奈米線的SPM與電性分析……………………………… 42 4.4 矽奈米線的拉曼光譜分析………………………………… 45 4.5製程條件對成長矽奈米線的影響 4.5.1 回火金薄膜對成長矽奈米線的影響…………………47 第五章、結論…………………………………………………49 參考文獻………………………………………………………52zh_TW
dc.language.isoen_USzh_TW
dc.publisher電機工程學系zh_TW
dc.subjectECR-CVDen_US
dc.subject電子迴旋共振化學氣相沉積zh_TW
dc.subjectsilicon nanowireen_US
dc.subject矽奈米線zh_TW
dc.titleECR-CVD成長矽奈米線之研究zh_TW
dc.titleGrowth silicon nanowires by ECR-CVDen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
Appears in Collections:電機工程學系所
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