Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8007
標題: 快速升溫退火方式製作低溫多晶矽薄膜電晶體
Low-temperature poly silicon thin film transistor fabricated by rapid thermal annealing
作者: 朱陸水
關鍵字: 快速能量傳輸退火;低溫多晶矽
出版社: 電機工程學系
摘要: 
摘要
本論文探討以快速能量傳輸退火技術(RETA)及直接照光退火方式將a-Si:H薄膜再結晶成poly-Si薄膜,並結合氫電漿輔助結晶的特性提高薄膜結晶品質,藉以製作較高品質之低溫多晶矽薄膜電晶體(LTPS TFT)。
在RETA方面,以未經過氫電漿及以氫電漿峰值功率200及300W在50℃及200℃溫度下轟擊之a-Si:H薄膜做結晶前處理;在直接照光退火方面,以未經過氫電漿及以300W在50℃下之氫電漿轟擊分別對圖案化及未圖案化a-Si:H薄膜做結晶前處理。
退火後之poly-Si薄膜利用Raman光譜儀、X-ray 繞射儀、原子力顯微鏡(AFM)及紫外光反射率進行量測,分別對結晶度、晶向
及表面粗糙度等特性作分析。
實驗結果顯示,使用RETA技術只須315秒的回火時間,即可將a-Si:H再結晶成poly-Si,而薄膜在經過氫電漿處理後,會使得表面粗糙度增加及厚度減少,以RETA製作之poly-Si有較低的表面粗糙度,分別為0.57 nm∼2.37 nm,經過氫電漿處理後之薄膜的Raman光譜峰值訊號在519.62 cm-1,與單晶矽光譜峰值相差0.38 cm-1。而直接照光退火方式在金屬吸熱層覆蓋率為25%下只須375秒的回火時間,即可選擇性的將a-Si:H再結晶成poly-Si,在氫電漿處理前及處理後之未圖案化區域均有橫向結晶的現象出現,而橫向結晶區域有較低的表面粗糙度,分別為2.32 nm及4.99 nm,而氫電漿處理前及處理後之圖案化之poly-Si薄膜粗糙度分別為11.16 nm及16.11 nm,經過氫電漿處理後之薄膜的Raman光譜峰值訊號在519.94 cm-1,與單晶矽光譜峰值位置一樣。

Abstract
The propose of this thesis is to discuss the recrystallization from a-Si:H to poly-Si thin film by rapid thermal transfer annealing(RETA) technology and direct illuminated annealing method. To increase the crystalline performance that combines the hydrogen plasma enhanced crystallization property. For the proposes of fabricated higher performance low temperature poly silicon thin film transistor.
For uses RETA. Before a-Si:H recrystallization uses no hydrogen plasma and hydrogen plasma exposure at RF power 200W, 300W, 50℃ and 200℃; For uses direct illuminated annealing. Before a-Si:H patterned and no patterned recrystallization uses no hydrogen plasma and hydrogen plasma exposure at RF power 300W and 50℃.
Poly-Si can be characterized with Raman spectrum, X-ray diffraction, atomic force microscopy(AFM) and UV reflectance to analysis its characteristics, such as crystallinity, crystal direction and roughness.
The results shows that uses RETA recrystallization from a-Si:H to poly-Si only 315 sec. After hydrogen plasma exposure that film surface roughness increase and thickness decrease. Lower surface roughness for poly-Si by uses RETA. Roughness is 0.57 nm ~ 2.37 nm. After hydrogen plasma exposure that Raman spectrum peak is 519.62 cm-1 and differential 0.38 cm-1 with crystal-Si. The direct illuminated annealing for 25% metal absorption of heat layer can selectivity recrystallization from a-Si:H to poly-Si only 375 sec. There is the lateral crystallization on the no patterned area by direct illuminated annealing. The lateral crystalline area has lower surface roughness were 2.32 nm and 4.99 nm. Before and after hydrogen plasma exposure that patterned poly-Si surface roughness were 11.16 nm and 16.11 nm. After hydrogen plasma exposure that Raman spectrum peak was 519.94 cm-1 the same with crystal-Si.
URI: http://hdl.handle.net/11455/8007
Appears in Collections:電機工程學系所

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