Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8296
標題: 射頻微機電開關理論分析與設計
Analysis and Design of RF MEMS Switches
作者: 廖一遂
關鍵字: 插入損耗;隔離度;反射係數;臨界電壓;開關切換時間
出版社: 電機工程學系
摘要: 
在無線通訊領域中,傳統的射頻開關皆採用固態電子元件,如PIN二極體與場效電晶體,但其高頻電磁特性皆不理想。利用微機電技術所製作的射頻開關,則具有低插入損失、高隔離度與高頻寬的優點。在射頻微機電開關過去的研究中,多半是屬於元件的製作與量測,甚少有電磁特性的理論分析。本論文將針對並聯電容式開關做理論性的分析,探討在不同的電阻、電感與電容下開關的S參數特性曲線,與理想化條件下的開關切換電壓與時間,以期能針對不同應用領域,提供一套開關結構尺寸設計與特性預估的方法,可有效降低錯誤嘗試所浪費的人力與物力。

In the wireless communications, the radio frequency (RF) MEMS switches will be used to replace the traditional solid-state devices such as the PIN diode and the field effect transistor by their good electromagnetic characteristics at high frequency. The advantages of the RF switches using MEMS technology include the low insertion loss, the high isolation, and the high bandwidth. The studies of the RF MEMS switches were devoted to the fabrication and the measurement of devices, but less analysis of the electromagnetic characteristics in the past. The thesis focuses on the S-parameter at different resistances, inductances, and capacitances of shunt capacitive RF MEMS switches. And we predict the switching time and the operating voltage in ideal condition of the RF MEMS switches. The results can provide the structure design and characteristic estimation of the RF MEMS switches at different frequencies application. It can avoid wasting on try and error and save time.
URI: http://hdl.handle.net/11455/8296
Appears in Collections:電機工程學系所

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