Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8301
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dc.contributor.advisor貢中元zh_TW
dc.contributor.advisor洪瑞華zh_TW
dc.contributor.author楊正德zh_TW
dc.contributor.authorYANG, CHENG-TEen_US
dc.date2004zh_TW
dc.date.accessioned2014-06-06T06:41:20Z-
dc.date.available2014-06-06T06:41:20Z-
dc.identifier.urihttp://hdl.handle.net/11455/8301-
dc.description.abstract本論文選擇以Nd:YAG雷射,進行長波長、短波長的雷射加熱使藍寶石/氮化鎵薄膜基板剝離研究,本研究成功使的氮化鎵薄膜試片(1cm x 1cm)均勻完整的轉換至 玻璃上,以供後續研究。 本論文針對幾個主要的課題進行探索研究。第一,由於雷射的每一個單一脈衝時的出光能量不均勻,因此雷射出光的能量密度需調整,且配合移動平台速度,使雷射能剝下GaN薄膜,第二,採用YAG 532nm(長波長)/355nm(短波長)對於剝離 /GaN亦有不同的剝離現象,所剝下的氮化鎵薄膜以掃描式聲波顯微鏡(SAM)、光學顯微鏡(OM)、X光繞射儀(XRD),進行觀察。zh_TW
dc.description.abstractIn this research, a laser lift off (LLO) technology was studied using Nd:YAD laser, with two different wave length 355nm (intra band) and 532 nm (inter band), to heat the sapphire wafer and to separate GaN film from sapphire. A complete perfect GaN sample film (1 cm X 1 cm ) was successfully transferred to a piece of glass. Two major works carried in this research are described as follows: I ) Since the laser beam energy in each pulse is in Gaussian distribution, a software program was written to control the moving speed of platform to assure the laser energy homogeneously distribute on the samples and thus make the complete removal of GaN film from sapphire substrate. II) Different phenomena were observed using the inter band and the intra band wave lengths. The surface of the lift off GaN films were examined using scanning acoustic microscope (SAM), optic microscope (OM) and X-ray diffraction meter (XRD)en_US
dc.description.tableofcontents第一章 概論-------------------------------------------1 第二章 雷射剝離技術------------------------------------2 (一)短波長雷射剝離-------------------------------------5 (三)長波長雷射剝離-------------------------------------6 第三章 設備材料特性介紹--------------------------------7 (一)Nd:YAG雷射介紹-------------------------------------7 (二)晶圓接合機台 ------------------------- ------------8 (三)移動平台程式---------------------------------------8 第四章 實驗步驟----------------------------------------9 (一)樣品製作-------------------------------------------9 (二)晶圓清洗-------------------------------------------9 (三)晶圓接合------------------------------------------10 (四)雷射掃描------------------------------------------10 (五)雷射致熱------------------------------------------10 1.YAG 355nm實驗-------------------------------------11 2.YAG 532nm實驗-------------------------------------12 (六)熱處理 -----------------------------------------13 (七)儀器觀察------------------------------------------13 第五章 實驗結果與討論---------------------------------14 (一)YAG 355nm-----------------------------------------14 (二)YAG 532nm-----------------------------------------17 第六章 總結-------------------------------------------20zh_TW
dc.language.isoen_USzh_TW
dc.publisher電機工程學系zh_TW
dc.subjectGaNen_US
dc.subject氮化鎵zh_TW
dc.subjectlift-offen_US
dc.subject剝離zh_TW
dc.title不同波長Nd:YAG 雷射氮化鎵薄膜剝離技術zh_TW
dc.titleThe study of intraband and interband Nd:YAG laser lift-off technology on GaN filmen_US
dc.typeThesis and Dissertationzh_TW
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextnone-
Appears in Collections:電機工程學系所
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