Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8360
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dc.contributor.advisor林泓均zh_TW
dc.contributor.advisorShyh-chi Wongen_US
dc.contributor.advisor王是琦zh_TW
dc.contributor.author張凱勛zh_TW
dc.contributor.authorChang, Kai-Hsunen_US
dc.date1999zh_TW
dc.date.accessioned2014-06-06T06:41:26Z-
dc.date.available2014-06-06T06:41:26Z-
dc.identifier.urihttp://hdl.handle.net/11455/8360-
dc.description.abstract磊浦電路在快閃式或者電子可擦拭記憶體的應用上具有非常重要的地位。此外,它們也經常的被廣泛應用在切換電容式系統(如類比數位轉換器,或濾波器)上。 最近,隨著混合式可攜帶的通訊系統普遍發展,低電壓及低消耗功率的電路系統已成為設計的主流。因此,一種使用P-型或N-型的場效電晶體及電容用來產生負電壓或正電壓的新式低電壓磊浦電路將在本萹論文中提出。在低電壓操作時,有兩種主要限制導致於磊浦電路的輸出電壓和效能降低,那即是場效電晶體的高臨界電壓和本體基板效應。兩種新的技術被提出來改善上述之限制,一為新式的基板連接技術,另一為使用小的磊浦電路產生較高的電壓來控制主要磊浦電路增強輸出電壓增益。使用此兩種新技術,可使磊浦電路在低電壓時也能獲得較高的負電壓及正電壓增益。附加的,另一種新式輔助“閘級-汲級偏壓”電晶體技術可以有效的解決當電路有負載電流時的反向電荷分流效應,因此可以產生較高的電壓增益及較穩定輸出波形。zh_TW
dc.description.abstractThe charge pumping circuits are very useful and crucial for applications in Flash EEPROM memories circuits. Those are also widely used in switch capacitor systems, such as A/D, D/A, filter systems. The recent development of portable mixed-mode communication systems has driven to the circuits tolow voltage and low power consumption. Therefore, this thesis proposed the novel charge pumping circuits for low supply voltages utilizing N-MOSFET's or P-MOSFET's with capacitors to generate positive and negative boosted voltages. The two major factors limiting the pumping gain and efficiency are the body effect and the threshold voltage. Two techniques were proposed to minimize the influence of them. One is the new substrate connected technique to eliminate the body effect. The other one is the small pumping circuit providing higher gate voltages of the major pumping circuit to enhance the pumping gain. With these two new techniques, the new pumping circuits have high positive or negative boosted voltages at low supply voltages. In addition, a new “gate-drain bias” auxiliary transistor technique which overcomes charge reverse sharing problem when the circuit output node has load current, can keep the high pumping gain and generate more stable output voltage waveform.en_US
dc.description.tableofcontentsAbstract (in Chinese)……………………………………………………i Abstract (in English).……………………………………………………ii Acknowledgements……………………………………………………………iv Contents……………………………………………………………………vi List of Figures……………………………………………………………ix Chapter 1………………………………………………………………1 Introduction…………………………………………………………………1 1.1 Application of charge pump circuits…………………1 1.1.1 memory circuits…………………………………….…………2 1.1.2 switch capacitor system………………………………………6 1.2 Low voltage / Low power design…………………………9 1.2.1 the reasons………………………………………………………9 1.2.2 the trends………………………………………………………11 1.3 Thesis organization………………………………………………16 Chapter 2………………………………………………………………17 Existing Charge pump circuits…………………………………………17 2.1 Dickson charge pump circuit……………………………………17 2.1.1 fundamental principles…………….……………………………19 2.1.2 limitations…………………….……………………………………22 2.2 Other charge pump circuits…………………………………………23 2.2.1 overviews of different charge pumping circuits……………23 2.2.2 limitations…………………………………………………………27 2.3 Ncp-x charge pumping circuits……………………………………27 2.3.1 Ncp-1 charge pumps ……...……………...……………………28 2.3.2 Ncp-2 charge pumps …...…………………………………………30 2.3.3 Ncp-3 charge pumps …...…………………………………………31 2.3.4 the pros and cons…………………………………………………33 2.4 Summary………………………………………………………………….34 Chapter 3………………………………………………………………35 New charge pump circuits …………………………....…………….…35 3.1 The idea of design………………………………………35 3.1.1 the structures…………………………………………………35 3.1.2 the principle..………………………………………………39 3.2 Novel low voltage charge pumps………….…….……41 3.2.1 New-1 pumping circuit ………………………………………41 3.2.2 the modified pumps circuit (New-2)…………...………44 3.3 The pros and cons……………………………46 3.4 Summary…………………………………………47 Chapter 4………………………………………………………………48 Simulation results and Implementation………………………………48 4.1 Nominal conditions…………………………48 4.2 Simulation results …………………………………………………49 4.3 Chip implementation…...…………………………………………62 4.3.1 physical layout for New-1 circuit……………………………63 4.3.2 physical layout for New-2 circuit……………………………64 4.4 Summary………………………………………65 Chapter 5………………………………………………………………67 Conclusions…………………………………………………………………67 5.1 Reviews…………………………………………………………………….67 5.2 Future works…………………………………………………69 Bibliography…………………………………………………………………70 Chapter 1:………………………………………70 Chapter 2:………………………………………72 Chapter 3:………………………………………72 Chapter 4:………………………………………73zh_TW
dc.language.isoen_USzh_TW
dc.publisher電機工程學系zh_TW
dc.subjectlow voltageen_US
dc.subject低電壓zh_TW
dc.subjectcharge pumping circuitsen_US
dc.subject磊浦電路zh_TW
dc.title新式低電壓磊浦電路設計zh_TW
dc.titleDesign of novel low voltage charge pumping circuitsen_US
dc.typeThesis and Dissertationzh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeThesis and Dissertation-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
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