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標題: 90奈米雙閘極疊接電晶體直流與射頻特性分析
Characterization on DC and RF Performances of Dual-Gate Cascode Transistor in 90-nm CMOS Technology
作者: 官翰傑
Kuan, Han Chien
關鍵字: 雙閘極;Dual-Gatel;疊接電晶體;Cascode
出版社: 電機工程學系所
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This thesis investigates the DC, RF performances of a cascode transistor for RF integrated circuit application. The major goal of this thesis concentrates on device characterization and model extraction.
A Dual-Gate cascode is implemented for improving high-frequency performance. The proposed layout shows the reduction of 15% device area in the thesis. Keeping the identical bias condition, measurement result shows that the proposed device has high cut-off frequency and excellent maximum oscillation frequency. The proposed layout shows the improvement of fmax has 12.2% compared with standard layout. Generally, the Dual-Gate transistors are extremely attractive for a variety of application such as the gain control, low noise, small layout area and high breakdown voltage.
In this thesis, a small signal equivalent circuit is proposed to extract the intrinsic and extrinsic elements of Dual-Gate transistor. The initial values are determined from both of the DC and RF measurements during model extraction. The elements of extrinsic capacitance, resistance and inductance are extracted by three-port Y-parameter and Z-parameter calculation from cold measurements. The intrinsic elements of Dual-Gate biased properly are directly extracted from hot measurement. The extracted element values are then optimized to fit the proposed equivalent circuit using the measured three-port S-matrix.
其他識別: U0005-3007200817412700
Appears in Collections:電機工程學系所

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